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Pub. No.:    WO/2011/142371    International Application No.:    PCT/JP2011/060791
Publication Date: 17.11.2011 International Filing Date: 28.04.2011
H01L 21/8242 (2006.01), G11C 11/405 (2006.01), H01L 21/336 (2006.01), H01L 21/8247 (2006.01), H01L 27/108 (2006.01), H01L 27/115 (2006.01), H01L 29/786 (2006.01), H01L 29/788 (2006.01), H01L 29/792 (2006.01)
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 398, Hase, Atsugi-shi, Kanagawa 2430036 (JP) (For All Designated States Except US).
YAMAZAKI, Shunpei [JP/JP]; (JP) (For US Only).
KATO, Kiyoshi; (For US Only).
SHIONOIRI, Yutaka; (For US Only).
SEKINE, Yusuke; (For US Only).
FURUTANI, Kazuma; (For US Only).
GODO, Hiromichi; (For US Only)
Inventors: YAMAZAKI, Shunpei; (JP).
KATO, Kiyoshi; .
SHIONOIRI, Yutaka; .
SEKINE, Yusuke; .
FURUTANI, Kazuma; .
GODO, Hiromichi;
Priority Data:
2010-112260 14.05.2010 JP
Abstract: front page image
(EN)A semiconductor device including a first transistor and a second transistor and a capacitor which are over the first transistor is provided. A semiconductor layer of the second transistor includes an offset region. In the second transistor provided with an offset region, the off-state current of the second transistor can be reduced. Thus, a semiconductor device which can hold data for a long time can be provided.
(FR)L'invention porte sur un dispositif à semi-conducteurs, lequel dispositif comprend un premier transistor et un second transistor et un condensateur qui se trouvent sur le premier transistor. Une couche semi-conductrice du second transistor comprend une région de décalage. Dans le second transistor comportant une région de décalage, le courant d'état bloqué du second transistor peut être réduit. Par conséquent, un dispositif à semi-conducteurs qui peut conserver des données pendant une longue durée peut être produit.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)