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1. (WO2011141974) SOLID-STATE IMAGE PICKUP ELEMENT AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/141974    International Application No.:    PCT/JP2010/006202
Publication Date: 17.11.2011 International Filing Date: 19.10.2010
IPC:
H01L 27/146 (2006.01), H01L 27/14 (2006.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
SAEKI, Kosaku; (For US Only)
Inventors: SAEKI, Kosaku;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg.,5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053 (JP)
Priority Data:
2010-109182 11.05.2010 JP
Title (EN) SOLID-STATE IMAGE PICKUP ELEMENT AND METHOD FOR MANUFACTURING SAME
(FR) ÉLÉMENT SEMI-CONDUCTEUR DE CAPTURE D'IMAGE ET SON PROCÉDÉ DE FABRICATION
(JA) 固体撮像素子及びその製造方法
Abstract: front page image
(EN)Disclosed is a solid-state image pickup element which is provided with: a semiconductor substrate (100), which has a pixel region and a peripheral region; and a plurality of diffusion layers (102, 103), which are formed in the pixel region of the semiconductor substrate (100), and which are disposed in matrix. Furthermore, the solid-state image pickup element is provided with: a plurality of wiring layers (107), which are formed on the semiconductor substrate (100); a plurality of pixel side electrodes (108), which are formed at intervals on the wiring layers by being connected to the diffusion layers, respectively; light blocking films (111), which are formed between the pixel side electrodes; an organic photoelectric conversion film (109), which is formed to cover the pixel side electrodes and the light blocking films; and a transparent electrode (110), which is formed on the organic photoelectric conversion film, and which transmits visible light.
(FR)L'invention concerne un élément semi-conducteur de capture d'image comprenant : un substrat semi-conducteur (100) possédant une région de pixels et une région périphérique, et une pluralité de couches de diffusion (102, 103) formées dans la région de pixels du substrat semi-conducteur (100) et disposées en matrice. En outre, l'élément semi-conducteur de capture d'image comprend : une pluralité de couches de raccordement (107) formées sur le substrat semi-conducteur (100), une pluralité d'électrodes côté pixels (108) formées à des intervalles sur les couches de raccordement en étant respectivement connectées aux couches de diffusion, des films d'interception de la lumière (111) formés entre les électrodes du côté pixels, un film organique de conversion photoélectrique (109) formé de façon à recouvrir les électrodes côté pixels et les films d'interception de la lumière, et une électrode transparente (110) formée sur le film organique de conversion photoélectrique et laissant passer la lumière visible.
(JA) 固体撮像素子は、画素領域と周辺領域とを有する半導体基板(100)と、半導体基板(100)の画素領域に形成され、行列状に配置された複数の拡散層(102、103)とを備えている。さらに、固体撮像素子は、半導体基板(100)の上に形成された複数の配線層(107)と、複数の配線層の上に複数の拡散層とそれぞれ接続されると共に互いに間隔をおいて形成された複数の画素側電極(108)と、複数の画素側電極のそれぞれの間に形成された遮光膜(111)と、複数の画素側電極及び遮光膜を覆うように形成された有機光電変換膜(109)と、有機光電変換膜の上に形成され、可視光を透過する透明電極(110)とを備えている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)