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Machine translation
1. (WO2011141228) GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/141228    International Application No.:    PCT/EP2011/055044
Publication Date: 17.11.2011 International Filing Date: 31.03.2011
IPC:
H01L 21/335 (2006.01), H01L 21/336 (2006.01), H01L 29/78 (2006.01), H01L 29/06 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504 (US) (For All Designated States Except US).
IBM UNITED KINGDOM LIMITED [GB/GB]; PO Box 41, North Harbour Portsmouth Hampshire PO6 3AU (GB) (MG only).
SLEIGHT, Jeffrey [US/US]; (US) (For US Only).
BANGSARUNTIP, Sarunya [TH/US]; (US) (For US Only).
COHEN, Guy [IL/US]; (US) (For US Only)
Inventors: SLEIGHT, Jeffrey; (US).
BANGSARUNTIP, Sarunya; (US).
COHEN, Guy; (US)
Agent: WILLIAMS, Julian, David; IBM United Kingdom Limited Intellectual Property Law Hursley Park Winchester Hampshire SO21 2JN (GB)
Priority Data:
12/778,534 12.05.2010 US
Title (EN) GENERATION OF MULTIPLE DIAMETER NANOWIRE FIELD EFFECT TRANSISTORS
(FR) GÉNÉRATION DE TRANSISTORS À EFFET DE CHAMP À NANOFILS DE DIAMÈTRES MULTIPLES
Abstract: front page image
(EN)A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming pairs of semiconductor pads connected via respective nanowire channels at each of first and second regions with different initial semiconductor thicknesses and reshaping the nanowire channels into nanowires to each have a respective differing thickness reflective of the different initial semiconductor thicknesses.
(FR)L'invention concerne un procédé de modification d'une tranche ayant un semi-conducteur placé sur un isolant, le procédé comprenant les étapes suivantes : la formation de paires de pastilles semi-conductrices connectées par des canaux respectifs de nanofils au niveau de chacune de première et seconde régions, avec des épaisseurs différentes du semi-conducteur, et la remise en forme des canaux de nanofils en nanofils afin qu'ils aient chacun une épaisseur respective différente, reflétant les épaisseurs initiales différentes du semi-conducteur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)