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Machine translation
1. (WO2011139006) ORGANIC THIN-FILM TRANSISTOR HAVING IMPROVED CHARGE INJECTABILITY, AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/139006    International Application No.:    PCT/KR2010/005917
Publication Date: 10.11.2011 International Filing Date: 01.09.2010
IPC:
H01L 29/786 (2006.01)
Applicants: HANBAT NATIONAL UNIVERSITY [KR/KR]; 16-1, Deongmyeong-dong, Yuseong-gu Daejeon 305-719 (KR) (For All Designated States Except US).
NOH, Yong Young [KR/KR]; (KR) (For US Only)
Inventors: NOH, Yong Young; (KR)
Agent: HUR, Soojun; 810, Chongsaofficetel 915, Dunsan-dong, Seo-gu Daejeon 302-120 (KR)
Priority Data:
10-2010-0042894 07.05.2010 KR
Title (EN) ORGANIC THIN-FILM TRANSISTOR HAVING IMPROVED CHARGE INJECTABILITY, AND METHOD FOR MANUFACTURING SAME
(FR) TRANSISTOR À COUCHES MINCES ORGANIQUES AYANT UNE CAPACITÉ D'INJECTION DE CHARGE AMÉLIORÉE, ET SON PROCÉDÉ DE FABRICATION
(KO) 전하 주입성을 향상시킨 유기박막트랜지스터 및 이의 제조방법
Abstract: front page image
(EN)The present invention relates to an organic thin-film transistor in which a solution of CS2CO3 is applied to only one of the source/drain electrodes on a substrate to thereby improve electron injectability, and to a complementary metal oxide semiconductor (CMOS) digital circuit using same. The organic thin-film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate dielectric disposed over the substrate that includes the gate electrode; source/drain electrodes disposed separately on portions of the gate dielectric; an electron-injection layer applied to one of the source/drain electrodes; and an organic semiconductor layer disposed on the substrate that includes the electron-injection layer.
(FR)La présente invention concerne un transistor à couches minces organiques dans lequel une solution de CS2CO3 est appliquée uniquement à une parmi les électrodes de source/drain sur un substrat pour améliorer la capacité d'injection d'électrons, ainsi qu'un circuit numérique à semi-conducteur d'oxyde métallique complémentaire (CMOS). Le transistor à couches minces organiques comporte: un substrat ; une électrode de grille disposée sur le substrat ; un diélectrique de grille disposé sur le substrat qui comporte l'électrode de grille ; des électrodes de source/drain disposées séparément sur des parties du diélectrique de grille ; une couche d'injection d'électrons appliquée à une des électrodes de source/drain ; et une couche semi-conductrice organique disposée sur le substrat qui comprend la couche d'injection d'électrons.
(KO)본 발명은 기판상의 소스/드레인 전극 중 한쪽 전극에만 CS2C03 등의 용액을 도포하여 전자주입성을 향상시킨 유기박막트랜지스터 및 그를 이용한 금속산화막반도체(CMOS) 디지털 회로에 관한 것으로 기판; 상기 기판 상에 위치한 게이트 전극; 상기 게이트 전극을 포함하는 기판 전면에 걸쳐 위치한 게이트 절연막; 상기 게이트 절연막 상의 일부 영역에 서로 이격되어 위치하는 소스/드레인 전극; 상기 소스/드레인 전극 중 어느 하나에만 도포된 전자주입층; 상기 전자주입층을 포함하는 기판 상에 위치하는 유기반도체층;을 포함하는 것을 특징으로 하는 유기박막트랜지스터로 구성된다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)