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1. (WO2011137606) CAPACITIVE TOUCH SENSING STRUCTURE, PROCESS OF PRODUCING THE SAME AND TOUCH SENSING DEVICE USING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/137606    International Application No.:    PCT/CN2010/075268
Publication Date: 10.11.2011 International Filing Date: 19.07.2010
IPC:
G06F 3/044 (2006.01)
Applicants: TPK TOUCH SOLUTIONS INC. [CN/CN]; DING,Hua,14F, No.136 Sec3, Ren-Ai Rd. Taipei, Taiwan (CN) (For All Designated States Except US).
LIU, Chenyu [CN/CN]; (CN) (For US Only).
LEE, Luhsing [CN/CN]; (CN) (For US Only)
Inventors: LIU, Chenyu; (CN).
LEE, Luhsing; (CN)
Agent: ADVANCE CHINA I.P LAW OFFICE; Suite 918-920, Dongshan Plaza No. 69 Xianlie Central Road Guangzhou, Guangdong 510095 (CN)
Priority Data:
201010167861.0 04.05.2010 CN
Title (EN) CAPACITIVE TOUCH SENSING STRUCTURE, PROCESS OF PRODUCING THE SAME AND TOUCH SENSING DEVICE USING THE SAME
(FR) STRUCTURE CAPACITIVE DE DÉTECTION DE TOUCHER, PROCÉDÉ DE FABRICATION DE CELLE-CI ET DISPOSITIF DE DÉTECTION DE TOUCHER UTILISANT CELLE-CI
Abstract: front page image
(EN)The present invention relates to a capacitive touch sensing structure. The capacitive touch sensing structure includes a substrate, at least one first direction electrode, at least one insulator, at least one second direction electrode, and at least one protective block. The first direction electrode is superposed on the substrate. The insulator is superposed on the first direction electrode. The second direction electrode is superposed on the insulator opposite to the first direction electrode and crosses the first direction electrode to form at least one location of crossing. The protective block is disposed on the second direction electrode and covers the location of crossing.
(FR)La présente invention porte sur une structure capacitive de détection de toucher. La structure capacitive de détection de toucher comprend un substrat, au moins une première électrode de direction, au moins un isolateur, au moins une seconde électrode de direction et au moins un bloc de protection. La première électrode de direction est superposée sur le substrat. L'isolateur est superposé sur la première électrode de direction. La seconde électrode de direction est superposée sur l'isolateur, à l'opposé de la première électrode de direction, et croise la première électrode de direction pour former au moins un emplacement de croisement. Le bloc de protection est disposé sur la seconde électrode de direction et recouvre l'emplacement de croisement.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)