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Machine translation
1. (WO2011137512) NON-CONTACT MEASUREMENT OF THE DOPANT CONTENT OF SEMICONDUCTOR LAYERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/137512    International Application No.:    PCT/CA2011/000508
Publication Date: 10.11.2011 International Filing Date: 03.05.2011
IPC:
G01N 21/35 (2006.01), H01L 21/66 (2006.01)
Applicants: AURORA CONTROL TECHNOLOGIES INC. [CA/CA]; 980 West 1st Street, Suite 210 North Vancouver, British Columbia V7P 3N4 (CA) (For All Designated States Except US).
HEAVEN, E. Michael [CA/CA]; (CA) (For US Only).
DEANS, Gordon Matthew [CA/CA]; (CA) (For US Only).
CADIEN, Kenneth [US/CA]; (CA) (For US Only).
BLAINE, Stephen Warren [CA/CA]; (CA) (For US Only)
Inventors: HEAVEN, E. Michael; (CA).
DEANS, Gordon Matthew; (CA).
CADIEN, Kenneth; (CA).
BLAINE, Stephen Warren; (CA)
Agent: REGEHR, Herbert B.; Bull, Housser & Tupper LLP 3000 Royal Centre, PO Box 11130 1055 West Georgia Street Vancouver, British Columbia V6E 3R3 (CA)
Priority Data:
61/282,989 03.05.2010 US
Title (EN) NON-CONTACT MEASUREMENT OF THE DOPANT CONTENT OF SEMICONDUCTOR LAYERS
(FR) MESURE SANS CONTACT DE LA TENEUR EN DOPANT DE COUCHES SEMI-CONDUCTRICES
Abstract: front page image
(EN)A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material and splitting the radiation into two beams, passing each beam through pass band filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.
(FR)L'invention porte sur un système et sur un procédé de mesure sans contact de la teneur en dopant d'un matériau semi-conducteur par réflexion d'un rayonnement infrarouge (IR) à partir du matériau et division de rayonnement en deux faisceaux, par le fait de faire passer chaque faisceau à travers des filtres passe-bande de différentes plages de longueur d'onde, par comparaison du niveau d'énergie traversant chaque filtre et par calcul de la teneur en dopant par référencement à une courbe de corrélation constituée par des teneurs en dopant de tranches connues pour ce système.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)