WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2011136737) SILICON BASED MILLIMETER WAVE WAVEGUIDE TRANSITION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/136737    International Application No.:    PCT/SG2010/000171
Publication Date: 03.11.2011 International Filing Date: 30.04.2010
Chapter 2 Demand Filed:    12.05.2011    
IPC:
H01P 5/107 (2006.01)
Applicants: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10, Connexis Singapore 138632 (SG) (For All Designated States Except US).
LIM, Teck Guan [SG/SG]; (SG) (For US Only).
KHOO, Yee Mong [SG/SG]; (SG) (For US Only).
HO, Soon Wee David [SG/SG]; (SG) (For US Only).
RAJOO, Ranjan [SG/SG]; (SG) (For US Only)
Inventors: LIM, Teck Guan; (SG).
KHOO, Yee Mong; (SG).
HO, Soon Wee David; (SG).
RAJOO, Ranjan; (SG)
Agent: ELLA CHEONG SPRUSON & FERGUSON (SINGAPORE) PTE LTD; P.O. Box 1531, Robinson Road Post Office Singapore 903031 (SG)
Priority Data:
Title (EN) SILICON BASED MILLIMETER WAVE WAVEGUIDE TRANSITION
(FR) TRANSITION DE GUIDE D'ONDES D'ONDE MILLIMÉTRIQUE À BASE DE SILICIUM
Abstract: front page image
(EN)A waveguide to microstrip transition for converting electromagnetic wave signals to electrical signals comprises a silicon substrate having a trench in a top surface thereof; a polymer material disposed in said trench; a first thin film disposed on said top surface and covering said polymer; and a metallic signal line disposed on a top surface of said first thin film and extending at least partially over said trench; wherein said metallic signal line receives said electromagnetic wave signal and converts said electromagnetic wave signal to said electrical signal.
(FR)La présente invention a trait à une transition de guide d'ondes vers microruban permettant de convertir des signaux d'ondes électromagnétiques en signaux électriques, laquelle transition comprend un substrat de silicium qui est doté d'une tranchée dans une surface supérieure de celui-ci ; un polymère qui est disposé dans ladite tranchée ; une première couche mince qui est disposée sur ladite surface supérieure et qui recouvre ledit polymère ; et une ligne de signaux métallique qui est disposée sur une surface supérieure de ladite première couche mince et qui s'étend au moins partiellement au-dessus de ladite tranchée ; laquelle ligne de signaux métallique reçoit ledit signal d'onde électromagnétique et convertit ledit signal d'onde électromagnétique en signal électrique.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)