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Machine translation
1. (WO2011136404) PHOTONIC DEVICE PACKAGE MODULE AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/136404    International Application No.:    PCT/KR2010/002666
Publication Date: 03.11.2011 International Filing Date: 28.04.2010
IPC:
H01L 33/64 (2010.01), H01L 33/60 (2010.01)
Applicants: WAVENICS INC. [KR/KR]; 2305, Semiconductor-dong, KAIST Guseong-dong, Yuseong-gu Daejeon 305-701 (KR) (For All Designated States Except US).
KIM, Kyoung-Min [KR/KR]; (KR) (For US Only).
SHIN, Seung-Chul [KR/KR]; (KR) (For US Only).
KIM, Jung-Hyun [KR/KR]; (KR) (For US Only).
CHO, Chang-Hee [KR/KR]; (KR) (For US Only).
PARK, Joong-Moo [KR/KR]; (KR) (For US Only)
Inventors: KIM, Kyoung-Min; (KR).
SHIN, Seung-Chul; (KR).
KIM, Jung-Hyun; (KR).
CHO, Chang-Hee; (KR).
PARK, Joong-Moo; (KR)
Agent: YOU ME PATENT AND LAW FIRM; Seolim Bldg., 649-10 Yoksam-dong, Kangnam-ku Seoul 135-080 (KR)
Priority Data:
Title (EN) PHOTONIC DEVICE PACKAGE MODULE AND MANUFACTURING METHOD THEREOF
(FR) MODULE DE BOÎTIER DE DISPOSITIF PHOTONIQUE ET SON PROCÉDÉ DE FABRICATION
(KO) 광소자 패키지 모듈 및 그 제조방법
Abstract: front page image
(EN)The present invention provides a method for manufacturing a photonic device package module, which can be configured to minimize thermal resistance and to immediately emit generated heat through a heat sink. The method for manufacturing the photonic device package module of the present invention comprises the steps of: preparing a board-shaped metal substrate; oxidizing one side of the metal substrate to the depth of 10-100㎛, and forming a metal oxide layer; removing a part of the metal substrate to the metal oxide layer from the opposite side of the metal oxide layer, and forming a mounting space having a reflector; forming an insulation layer on an upper side of the metal substrate, and forming a connection wire; mounting a photonic device in the mounting space of the metal substrate, and connecting an electrode of the photonic device with the connection wire; forming a molding layer which is filled in the mounting space and is covered to protect the photonic device and the connection wire; removing the metal oxide layer; forming a solder layer; and mounting the metal substrate on the heat sink.
(FR)La présente invention porte sur un procédé de fabrication d'un module de boîtier de dispositif photonique, qui peut être configuré pour réduire au minimum la résistance thermique et pour évacuer immédiatement de la chaleur générée par l'intermédiaire d'un dissipateur thermique. Le procédé de fabrication du module de boîtier de dispositif photonique selon la présente invention comprend les étapes consistant à : préparer un substrat métallique en forme de plaque ; oxyder un côté du substrat métallique jusqu'à une profondeur de 10-100 µm, et former une couche d'oxyde métallique ; retirer une partie du substrat métallique jusqu'à la couche d'oxyde métallique à partir du côté opposé de la couche d'oxyde métallique, et former un espace de montage comportant un réflecteur ; former une couche isolante sur un côté supérieur du substrat métallique, et former un fil de connexion ; monter un dispositif photonique dans l'espace de montage du substrat métallique, et connecter une électrode du dispositif photonique au fil de connexion ; former une couche de moulage qui remplit l'espace de montage et couvre le dispositif photonique et le fil de connexion pour les protéger ; retirer la couche d'oxyde métallique ; former une couche de brasure tendre ; et monter le substrat métallique sur le dissipateur thermique.
(KO)본 발명은 열저항을 최소화하고 발생되는 열을 바로 방열판을 통하여 방출되도록 구성하는 것이 가능한 광소자 패키지 모듈 제조방법을 제공한다. 본 발명의 광소자 패키지 모듈 제조방법은 판형상의 금속기판을 준비하는 단계와, 금속기판을 한쪽면에서 10∼100㎛의 깊이까지 산화하여 금속산화물층을 형성하는 단계와, 금속기판의 일부를 금속산화물층의 반대쪽에서 금속산화물층까지 제거하여 반사경을 갖는 실장공간을 형성하는 단계와, 금속기판의 상면에 절연층을 형성하고 연결배선을 형성하는 단계와, 금속기판의 실장공간에 광소자를 실장하고 광소자의 전극과 연결배선을 연결하는 단계와, 실장공간을 채우며 광소자와 연결배선을 보호하도록 덮여지는 몰딩층을 형성하는 단계와, 금속산화물층을 제거하는 단계와, 솔더층을 형성하는 단계와, 방열판에 탑재하는 단계를 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)