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1. (WO2011136028) POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/136028    International Application No.:    PCT/JP2011/059219
Publication Date: 03.11.2011 International Filing Date: 07.04.2011
IPC:
H01M 4/1395 (2010.01), H01G 11/06 (2013.01), H01G 11/22 (2013.01), H01G 11/24 (2013.01), H01G 11/26 (2013.01), H01G 11/30 (2013.01), H01G 11/46 (2013.01), H01G 11/66 (2013.01), H01G 11/68 (2013.01), H01G 11/70 (2013.01), H01G 11/84 (2013.01), H01G 11/86 (2013.01), H01G 9/00 (2006.01), H01M 4/134 (2010.01), H01M 4/38 (2006.01), H01M 4/64 (2006.01), H01M 4/66 (2006.01), H01M 4/70 (2006.01), H01M 4/74 (2006.01)
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 398, Hase, Atsugi-shi, Kanagawa 2430036 (JP) (For All Designated States Except US).
KURIKI, Kazutaka [JP/JP]; (JP) (For US Only).
YUKAWA, Mikio; (For US Only).
ASANO, Yuji; (For US Only)
Inventors: KURIKI, Kazutaka; (JP).
YUKAWA, Mikio; .
ASANO, Yuji;
Priority Data:
2010-104587 28.04.2010 JP
2010-122609 28.05.2010 JP
2010-122610 28.05.2010 JP
2010-122473 28.05.2010 JP
Title (EN) POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
(FR) DISPOSITIF DE STOCKAGE D'ÉNERGIE ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.
(FR)La présente invention a trait à un procédé de fabrication d'un dispositif de stockage d'énergie consistant à former une couche de silicium cristallin incluant une zone de silicium cristallin de type trichite en tant que couche de matière active au-dessus d'un collecteur de courant au moyen d'un procédé de dépôt chimique en phase vapeur à faible pression au cours duquel le chauffage est effectué à l'aide d'un gaz de dépôt contenant du silicium. Le dispositif de stockage d'énergie inclut le collecteur de courant, une couche mixte formée au-dessus du collecteur de courant, et la couche de silicium cristallin tenant lieu de couche de matière active formée au-dessus de la couche mixte. La couche de silicium cristallin inclut une zone de silicium cristallin et une zone de silicium cristallin de type trichite incluant une pluralité de protubérances qui font saillie au-dessus de la zone de silicium cristallin. Avec les protubérances, la surface de la couche de silicium cristallin tenant lieu de couche de matière active peut être augmentée.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)