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1. (WO2011135862) NITRIDE-TYPE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/135862    International Application No.:    PCT/JP2011/002489
Publication Date: 03.11.2011 International Filing Date: 27.04.2011
IPC:
H01L 33/32 (2010.01), H01L 33/36 (2010.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
YOKOGAWA, Toshiya; (For US Only).
KATO, Ryou; (For US Only).
ANZUE, Naomi; (For US Only)
Inventors: YOKOGAWA, Toshiya; .
KATO, Ryou; .
ANZUE, Naomi;
Agent: OKUDA, Seiji; OKUDA & ASSOCIATES, 10th Floor, Osaka Securities Exchange Bldg., 8-16, Kitahama 1-chome, Chuo-ku, Osaka-shi, Osaka 5410041 (JP)
Priority Data:
2010-104364 28.04.2010 JP
Title (EN) NITRIDE-TYPE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF
(FR) ELÉMENT SEMI-CONDUCTEUR DE TYPE NITRURE, ET PROCÉDÉ DE PRODUCTION ASSOCIÉ
(JA) 窒化物系半導体素子およびその製造方法
Abstract: front page image
(EN)A nitride-type semiconductor element comprising a p-type AldGaeN layer (25) which has an m surface as the growth surface and an electrode (30) which is arranged on the p-type AldGaeN layer (25), wherein the AldGaeN layer (25) has a p-AldGaeN contact layer (26) which comprises an AlxGayInzN (x+y+z=1, x≥0, y>0, z≥0) semiconductor having a thickness of 26 to 60 nm inclusive, and wherein the p-AldGaeN contact layer (26) comprises a body region (26A) which contains Mg at a concentration of 4×1019 to 2×1020 cm-3 inclusive and a high concentration region (26B) which is in contact with the electrode (30) and has an Mg concentration of 1×1021 cm-3 or more.
(FR)La présente invention concerne un élément semi-conducteur de type nitrure, comprenant une couche de AldGaeN de type p (25), comportant une surface m comme surface de dépôt, et une électrode (30) agencée sur la couche de AldGaeN de type p (25). La couche de AldGaeN (25) comporte une couche de contact de p-AldGaeN (26) comprenant un semi-conducteur de AlxGayInzN (avec x + y + z = 1, x ≥ 0, y > 0, z ≥ 0) ayant une épaisseur comprise entre 26 et 60 nm inclus. La couche de contact de p-AldGaeN (26) comprend une région de corps (26A) contenant du Mg à une concentration comprise entre 4 × 1019 et 2 × 1020 cm-3 inclus, et une région de concentration élevée (26B), en contact avec l'électrode (30) et présentant une concentration de Mg supérieure ou égale à 1 × 1021 cm-3.
(JA) 本発明の窒化物系半導体素子は、成長面がm面であるp型AldGaeN層25と、p型AldGaeN層25上に設けられた電極30とを備え、AldGaeN層25は、厚さ26nm以上60nm以下のAlxGayInzN(x+y+z=1,x≧0,y>0,z≧0)半導体から形成されているp-AldGaeNコンタクト層26を有し、p-AldGaeNコンタクト層26は、4×1019cm-3以上2×1020cm-3以下のMgを含むボディ領域26Aと、電極30に接し、1×1021cm-3以上のMg濃度を有する高濃度領域26Bとを有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)