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Machine translation
1. (WO2011135669) PROCESS FOR PRODUCTION OF SiC SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/135669    International Application No.:    PCT/JP2010/057457
Publication Date: 03.11.2011 International Filing Date: 27.04.2010
IPC:
C30B 29/36 (2006.01)
Applicants: ECOTRON CO., LTD. [JP/JP]; 47, Umezu Takase-cho, Ukyo-ku, Kyoto-shi, Kyoto 6158686 (JP) (For All Designated States Except US).
YAMADA, Shinkichi [JP/JP]; (JP) (For US Only).
MATSUNAMI, Toru [JP/JP]; (JP) (For US Only).
NAKAMURA, Nobuhiko [JP/JP]; (JP) (For US Only)
Inventors: YAMADA, Shinkichi; (JP).
MATSUNAMI, Toru; (JP).
NAKAMURA, Nobuhiko; (JP)
Agent: JODAI, Tetsuji; 601 Newlife Koraibashi, 3-32, Higashikoraibashi, Chuo-ku, Osaka-shi, Osaka 5400039 (JP)
Priority Data:
Title (EN) PROCESS FOR PRODUCTION OF SiC SUBSTRATE
(FR) PROCESSUS DE PRODUCTION D'UN SUBSTRAT EN SiC
(JA) SiC基板の作製方法
Abstract: front page image
(EN)A crucible (60) having, formed therein, a single-crystalline 4H-SiC substrate (10), a Si layer (20), an upper spacer (40), and a carbon atom supply substrate (30) comprising a polycrystalline 3C-SiC having a (111) orientation is heated to 1800°C, and subsequently is retained at 1800˚C for a predetermined period, thereby causing the epitaxial growing of single-crystalline SiC on the single-crystalline SiC substrate (10).
(FR)L'invention concerne un processus caractérisé en ce qu'un creuset (60), dans lequel sont placés un substrat monocristallin en 4H-SiC (10), une couche (20) de Si, une entretoise supérieure (40) et un substrat (30) d'apport d'atomes de carbone comportant un 3C-SiC polycrystallin présentant une orientation (111), est chauffé jusqu'à 1800°C, puis maintenu à 1800˚C pendant une durée prédéterminée, provoquant ainsi la croissance épitaxiale de SiC monocristallin sur le substrat monocristallin (10) en SiC.
(JA)単結晶4H-SiC基板10、Si層20、上部スペーサ40、(111)配向性を持つ多結晶3C-SiCで形成された炭素原子供給基板30が配置された坩堝60を、1800℃まで昇温した後、1800℃に所定時間保持して、単結晶SiC基板10上で単結晶SiCをエピタキシャル成長させる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)