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1. WO2011133449 - A MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME

Publication Number WO/2011/133449
Publication Date 27.10.2011
International Application No. PCT/US2011/032850
International Filing Date 18.04.2011
IPC
H01L 27/102 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
102including bipolar components
H01L 27/28 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
H01L 51/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
B82Y 40/00 2011.1
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
B82Y 10/00 2011.1
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
G11C 13/025
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
02using elements whose operation depends upon chemical change
025using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
H01L 27/1021
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
102including bipolar components
1021including diodes only
H01L 27/2409
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2409comprising two-terminal selection components, e.g. diodes
H01L 27/2463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
Applicants
  • SANDISK 3D, LLC [US]/[US] (AllExceptUS)
  • KALRA, Pankaj [IN]/[US] (UsOnly)
  • MAKALA, Raghuveer, S. [IN]/[US] (UsOnly)
Inventors
  • KALRA, Pankaj
  • MAKALA, Raghuveer, S.
Agents
  • DUGAN, Brian, M.
Priority Data
12/765,95523.04.2010US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) A MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME
(FR) CELLULE MÉMOIRE COMPRENANT UN ÉLÉMENT DE MÉMOIRE À BASE DE CARBONE ET SES PROCÉDÉS DE FORMATION
Abstract
(EN) In a first aspect, a memory cell is provided, the memory cell including: (a) a first conducting layer formed above a substrate; (b) a second conducting layer formed above the first conducting layer; (c) a structure formed between the first and second conducting layers, wherein the structure includes a sidewall that defines an opening extending between the first and second conducting layers, and wherein the structure is comprised of a material that facilitates selective, directional growth of carbon nano-tubes; and (d) a carbon-based switching layer that includes carbon nano-tubes formed on the sidewall of the structure. Numerous other aspects are provided.
(FR) Selon un premier aspect, l'invention concerne une cellule mémoire, comprenant : (a) une première couche conductrice formée sur un substrat; (b) une seconde couche conductrice formée sur la première couche conductrice; (c) une structure formée entre la première et la seconde couche conductrices, ladite structure comprenant une paroi latérale qui définit une ouverture s'étendant entre la première et la seconde couche conductrices, et étant composée d'un matériau qui facilite la croissance directionnelle sélective des nanotubes, de carbone; et (d) une couche de commutation à base de carbone qui comprend des nanotubes de carbone formés sur la paroi latérale de la structure. L'invention concerne également de nombreux autres aspects.
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