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1. WO2011131000 - METHOD FOR ACHIEVING GRADED LAMINATION PASSIVATION THIN FILM ON BACKPLANE OF SOLAR BATTERY

Publication Number WO/2011/131000
Publication Date 27.10.2011
International Application No. PCT/CN2010/078484
International Filing Date 06.11.2010
IPC
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Applicants
  • 常州天合光能有限公司 CHANGZHOU TRINA SOLAR ENERGY CO., LTD. [CN]/[CN] (AllExceptUS)
  • 刘亚锋 LIU, Yafeng [CN]/[CN] (UsOnly)
Inventors
  • 刘亚锋 LIU, Yafeng
Agents
  • 常州市维益专利事务所 CHINA CHANGZHOU VEI PATENT OFFICE
Priority Data
201010152173.720.04.2010CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR ACHIEVING GRADED LAMINATION PASSIVATION THIN FILM ON BACKPLANE OF SOLAR BATTERY
(FR) PROCÉDÉ D'ÉLABORATION D'UN FILM MINCE DE PASSIVATION STRATIFIÉ SUR LA FACE ARRIÈRE D'UNE BATTERIE SOLAIRE
(ZH) 实现太阳能电池背表面缓变叠层钝化薄膜的方法
Abstract
(EN) A method for achieving a graded lamination passivation thin film on the backplane of a solar battery is provided. The method comprises depositing a thin film onto the backplane of the treated solar battery by chemical vapor deposition process, firstly using a mixture gas of a SiH4 gas and a N2O gas, and then, adding a NH3 gas gradually during the deposition process; thus the thin film is acquired which comprises a SiO2 layer, a silicon oxynitride layer, and a silicon nitride layer successively from the surface of silicon wafer towards the outside. And the thickness of the thin film is between 50nm and 300nm. The deposition of the high density thin film is achieved and the interface state due to the combination of different thin films is reduced efficiency by using the method. Furthermore, the thermal stability is improved and the film stress is reduced.
(FR) L'invention concerne un procédé d'élaboration d'un film mince de passivation stratifié sur la face arrière d'une batterie solaire. Le procédé consiste à déposer un film mince sur la face arrière de la batterie solaire traitée par un procédé de dépôt chimique en phase vapeur, en utilisant d'abord un mélange gazeux de SiH4 et N2O, puis en ajoutant progressivement du NH3 gazeux au cours du dépôt ; on obtient ainsi un film mince qui comprend, en partant de la surface de la plaquette de silicium vers l'extérieur, une couche de SiO2, une couche d'oxynitrure de silicium, et une couche de nitrure de silicium. L'épaisseur du film mince se situe entre 50 et 300 nm. Le film mince obtenu présente une densité élevée, et l'état de l'interface dû à la combinaison des différents films minces est efficacement réduit grâce audit procédé. En outre, la stabilité thermique est accrue et les contraintes dans le film sont réduites.
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