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1. WO2011126609 - SEMICONDUCTOR DEVICE AND METHOD

Publication Number WO/2011/126609
Publication Date 13.10.2011
International Application No. PCT/US2011/024983
International Filing Date 16.02.2011
IPC
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 27/0705
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
07the components having an active region in common
0705comprising components of the field effect type
H01L 27/085
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
H01L 27/088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 27/098
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
098the components being PN junction gate field-effect transistors
H01L 29/0653
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0642Isolation within the component, i.e. internal isolation
0649Dielectric regions, e.g. SiO2 regions, air gaps
0653adjoining the input or output region of a field-effect device, e.g. the source or drain region
H01L 29/0692
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
Applicants
  • FREESCALE SEMICONDUCTOR, INC. [US]/[US] (AllExceptUS)
  • KHEMKA, Vishnu K. [IN]/[US] (UsOnly)
  • KHAN, Tahir A. [IN]/[US] (UsOnly)
  • HUANG, Weixiao [CN]/[US] (UsOnly)
  • ZHU, Ronghua [US]/[US] (UsOnly)
Inventors
  • KHEMKA, Vishnu K.
  • KHAN, Tahir A.
  • HUANG, Weixiao
  • ZHU, Ronghua
Agents
  • WUAMETT, Jennifer
Priority Data
12/750,15130.03.2010US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND METHOD
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ
Abstract
(EN) Transistors (21, 41) employing floating buried layers may be susceptible to noise coupling into the floating buried layers. In IGFETS this is reduced or eliminated by providing a normally-ON switch (80, 80') coupling the buried layer (102, 142, 172, 202) and the IGFET source (22, 42) or drain (24, 44). When the transistor (71, 91) is OFF, this clamps the buried layer voltage and substantially prevents noise coupling thereto. When the drain-source voltage VDS exceeds the switch's (80, 80') threshold voltage Vt, it turns OFF, allowing the buried layer (102, 142, 172, 202) to float, and thereby resume normal transistor action without degrading the breakdown voltage or ON-resistance. In a preferred embodiment, a normally-ON lateral JFET (801, 801', 801-1, 801-2, 801-3) conveniently provides this switching function. The lateral JFET (801-3) can be included in the device (70, 70', 90, 90') by mask changes without adding or customizing any process steps, thereby providing the improved noise resistance without significant increase in manufacturing cost. The improvement applies to both P (90-1) and N channel (70-1, 70-2, 70-3) transistors and is particularly useful for LDMOS devices.
(FR) La présente invention concerne des transistors (21, 41) qui utilisent des couches encastrées flottantes et qui peuvent être sensibles à un couplage de bruit dans les couches encastrées flottantes. Dans des IGFET, ceci est réduit ou éliminé en fournissant un commutateur normalement allumé (80, 80') qui couple la couche encastrée (102, 142, 172, 202) et la source (22, 42) ou le drain (24, 44) IGFET. Lorsque le transistor (71, 91) est éteint, ceci verrouille la tension de couche encastrée et empêche sensiblement le couplage de bruit audit transistor. Lorsque la tension drain-source VDS dépasse la tension de seuil Vt du commutateur (80, 80'), il s'éteint, permettant à la couche encastrée (102, 142, 172, 202) de flotter, et ainsi de recommencer une action de transistor normale sans dégrader la tension disruptive ou la résistance de marche. Dans un mode de réalisation préféré, un JFET latéral normalement allumé (801, 801', 801-1, 801-2, 801-3) fournit de manière pratique cette fonction de commutation. Le JFET latéral (801-3) peut être inclus dans le dispositif (70, 70', 90, 90') par des changements de masque sans ajouter ou adapter d'étape de procédé, fournissant ainsi la résistance au bruit optimisée sans augmentation importante de coût de fabrication. L'optimisation s'applique à la fois aux transistors à canal P (90-1) et à canal N (70-1, 70-2, 70-3) et est particulièrement utile pour les dispositifs LDMOS.
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