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1. WO2011121561 - MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE

Publication Number WO/2011/121561
Publication Date 06.10.2011
International Application No. PCT/IB2011/051375
International Filing Date 31.03.2011
IPC
H01L 35/28 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
H01L 35/34 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 29/152
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
15Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
151Compositional structures
152with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
H01L 35/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
26using compositions changing continuously or discontinuously inside the material
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants
  • BASF SE [DE]/[DE] (AllExceptUS)
  • BASF (CHINA) COMPANY LIMITED [CN]/[CN] (MN)
  • HI-Z TECHNOLOGY, INC. (AllExceptUS)
  • HAASS, Frank [DE]/[DE] (UsOnly)
  • ELSNER, Norbert B. [US]/[US] (UsOnly)
  • GHAMATY, Saed [US]/[US] (UsOnly)
  • KROMMENHOEK, Daniel [US]/[US] (UsOnly)
Inventors
  • HAASS, Frank
  • ELSNER, Norbert B.
  • GHAMATY, Saed
  • KROMMENHOEK, Daniel
Agents
  • FEAUX DE LACROIX, Stefan
Priority Data
10158928.101.04.2010EP
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE
(FR) MATÉRIAU THERMOÉLECTRIQUE DE PUITS QUANTIQUE À SUPER-RÉSEAU MULTICOUCHE ET MODULE
Abstract
(EN) A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150°C for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 1018 to 1023 cm-3 and in the barrier layers is 1013 to 1018 cm-3.
(FR) La présente invention concerne un matériau thermoélectrique de puits quantique à super-réseau multicouche qui comprend au moins 10 couches alternées et dont l'épaisseur de chaque couche est inférieure à 50 nm, les couches alternées étant des couches électriquement conductrices et barrières, la structure de couche ne présentant aucune inter-diffusion discernable qui entraîne une désintégration ou une dissolution des limites de couche lors du traitement thermique à une température située dans la plage allant de 50 à 150 °C pendant une période d'au moins 100 heures, et la concentration en matériaux de dopage dans les couches conductrices va de 1018 à 1023 cm-3, et dans les couches barrières, va de 1013 à 1018 cm-3.
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