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1. WO2011117407 - METHOD FOR ETCHING CONDUCTIVE METAL OXIDE LAYER USING MICROELECTRODE

Publication Number WO/2011/117407
Publication Date 29.09.2011
International Application No. PCT/EP2011/054653
International Filing Date 25.03.2011
IPC
C25F 3/12 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3Electrolytic etching or polishing
02Etching
12of semiconducting materials
C25F 3/14 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3Electrolytic etching or polishing
02Etching
14locally
H01L 21/3063 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3063Electrolytic etching
CPC
C25F 3/12
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3Electrolytic etching or polishing
02Etching
12of semiconducting materials
C25F 3/14
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3Electrolytic etching or polishing
02Etching
14locally
H01L 21/3063
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3063Electrolytic etching
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
H01L 31/022475
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
022475composed of indium tin oxide [ITO]
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR] (AllExceptUS)
  • METAYE, Romain [FR]/[FR] (UsOnly)
  • GRISOTTO, Federico [IT]/[FR] (UsOnly)
Inventors
  • METAYE, Romain
  • GRISOTTO, Federico
Agents
  • AUGARDE, Eric
Priority Data
10 5222726.03.2010FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR ETCHING CONDUCTIVE METAL OXIDE LAYER USING MICROELECTRODE
(FR) PROCEDE POUR GRAVER UNE COUCHE D'OXYDE METALLIQUE CONDUCTEUR UTILISANT UNE MICROELECTRODE
Abstract
(EN)
The invention relates to a method for etching a selected area of a conductive metal oxide layer deposited onto a substrate, said method involving the electrochemical removal of said area in the presence of a polarized microelectrode and an electrochemical solution. The present invention also relates to the etched layer that is achieved by such a method.
(FR)
L'invention concerne un procédé pour graver une zone sélectionnée d'une couche d'oxyde métallique conducteur déposée sur un support, consistant à éliminer ladite zone par voie électrochimique en présence d'une microélectrode polarisée et d'une solution électrochimique. La présente invention concerne également la couche gravée obtenue par un tel procédé.
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