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1. WO2011110763 - METHOD FOR PREPARING AN ABSORBER THIN FILM FOR PHOTOVOLTAIC CELLS

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Publication Number WO/2011/110763
Publication Date 15.09.2011
International Application No. PCT/FR2011/050345
International Filing Date 17.02.2011
IPC
C25D 3/56 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3Electroplating; Baths therefor
02from solutions
56of alloys
C25D 3/58 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3Electroplating; Baths therefor
02from solutions
56of alloys
58containing more than 50% by weight of copper
C25D 9/08 2006.1
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
9Electrolytic coating other than with metals
04with inorganic materials
08by cathodic processes
H01L 31/0216 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/032 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
H01L 31/0336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0328including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272-H01L31/032174
0336in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
CPC
C25D 11/00
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
C25D 3/56
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
3Electroplating: Baths therefor
02from solutions
56of alloys
C25D 3/58
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
3Electroplating: Baths therefor
02from solutions
56of alloys
58containing more than 50% by weight of copper
C25D 9/08
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
9Electrolytic coating other than with metals
04with inorganic materials
08by cathodic processes
H01L 31/0216
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
H01L 31/0322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
0322comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
Applicants
  • ELECTRICITE DE FRANCE [FR]/[FR] (AllExceptUS)
  • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS - [FR]/[FR] (AllExceptUS)
  • CHASSAING, Elisabeth [FR]/[FR] (UsOnly)
  • LINCOT, Daniel [FR]/[FR] (UsOnly)
Inventors
  • CHASSAING, Elisabeth
  • LINCOT, Daniel
Agents
  • HUISMAN, Aurélien
Priority Data
10 5176911.03.2010FR
Publication Language French (fr)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR PREPARING AN ABSORBER THIN FILM FOR PHOTOVOLTAIC CELLS
(FR) PROCEDE DE PREPARATION D'UNE COUCHE MINCE D'ABSORBEUR POUR CELLULES PHOTOVOLTAÏQUES
front page image
Abstract
(EN) The invention relates to a method for preparing an A-B-C2 or A2-(Dx, E1_x)-C4 absorber thin film for photovoltaic cells where 0 ≤ x ≤ 1, A is an element or mixture of elements selected within Group 11, B is an element or mixture of elements selected within Group 13, C is an element or mixture of elements selected within Group 16, D is an element or mixture of elements selected within Group 12, and E is an element or mixture of elements selected within Group 14. Said method includes: a step (S1) of electrochemically depositing oxide from elements selected from among Groups 11, 12, 13, and 14, a step (S2) of annealing in a reducing atmosphere, and a step (S3) of supplying an element from Group 16.
(FR) Procédé de préparation d'une couche mince d'absorbeur pour cellules photovoltaïques de type A-B-C2 ou A2- (Dx, E1_x) - C4 avec 0≤ x ≤1, A est un élément ou un mélange d'éléments choisis dans le groupe 11, B est un élément ou un mélange d'éléments choisis dans le groupe 13, C est un élément ou un mélange d'éléments choisis dans le groupe 16, D est un élément ou un mélange d'éléments choisis dans le groupe 12 et E est un élément ou un mélange d'éléments choisis dans le groupe 14, ledit procédé comprenant : - une étape de dépôt électrochimique (S1) d'oxyde d'éléments choisis parmi les groupes 11, 12, 13, et 14, - une étape de recuit sous atmosphère réductrice (S2), et - une étape d'apport (S3) d'un élément du groupe 16.
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