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1. WO2011110618 - METHOD FOR PRODUCING A NON-VOLATILE ELECTRONIC DATA MEMORY ON THE BASIS OF A CRYSTALLINE OXIDE HAVING A PEROVSKITE STRUCTURE

Publication Number WO/2011/110618
Publication Date 15.09.2011
International Application No. PCT/EP2011/053592
International Filing Date 10.03.2011
IPC
H01L 45/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
G11C 13/00 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
CPC
G11C 13/0007
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0007comprising metal oxide memory material, e.g. perovskites
H01L 45/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
H01L 45/147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
14Selection of switching materials
145Oxides or nitrides
147Complex metal oxides, e.g. perovskites, spinels
H01L 45/1641
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
16Manufacturing
1641Modification of the switching material, e.g. post-treatment, doping
Applicants
  • TECHNISCHE UNIVERSITÄT BERGAKADEMIE FREIBERG [DE]/[DE] (AllExceptUS)
  • MEYER, Dirk, C. [DE]/[DE] (UsOnly)
  • KORTUS, Jens [DE]/[DE] (UsOnly)
  • ABENDROTH, Barbara [DE]/[DE] (UsOnly)
  • STÖCKER, Hartmut [DE]/[DE] (UsOnly)
  • ZSCHORNAK, Matthias [DE]/[DE] (UsOnly)
  • HANZIG, Florian [DE]/[DE] (UsOnly)
  • SEIBT, Juliane [DE]/[DE] (UsOnly)
  • WINTZ, Susi [DE]/[DE] (UsOnly)
  • SCHULZE, Jörg [DE]/[DE] (UsOnly)
Inventors
  • MEYER, Dirk, C.
  • KORTUS, Jens
  • ABENDROTH, Barbara
  • STÖCKER, Hartmut
  • ZSCHORNAK, Matthias
  • HANZIG, Florian
  • SEIBT, Juliane
  • WINTZ, Susi
  • SCHULZE, Jörg
Agents
  • UHLEMANN, Henry
Priority Data
10 2010 011 646.710.03.2010DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG EINES NICHTFLÜCHTIGEN ELEKTRONISCHEN DATENSPEICHERS AUF GRUNDLAGE EINES KRISTALLINEN OXIDS MIT PEROWSKITSTRUKTUR
(EN) METHOD FOR PRODUCING A NON-VOLATILE ELECTRONIC DATA MEMORY ON THE BASIS OF A CRYSTALLINE OXIDE HAVING A PEROVSKITE STRUCTURE
(FR) PROCÉDÉ DE FABRICATION D'UNE MÉMOIRE DE DONNÉES ÉLECTRONIQUE NON VOLATILE SUR LA BASE D'UN OXYDE CRISTALLIN PRÉSENTANT UNE STRUCTURE PÉROVSKITE
Abstract
(DE) Die vorliegende Erfindung sieht eine Lösung des Problems der nichtflüchtigen elektronischen Datenspeicherung durch Verwendung eines kristallinen Oxids vorzugsweise mit Perowskitstruktur vor. Durch einen mehrstufigen Prozess, der eine Modifikation von Leitfähigkeit und Oberflächenstruktur, eine Abscheidung von Elektroden sowie eine elektrische Formierung beinhaltet, wird ein Schalten zwischen verschiedenen Grenzflächenzuständen möglich. Die Daten werden dann in Form von Widerstandszuständen einzelner Speicherzellen gespeichert.
(EN) The present invention provides a solution to the problem of non-volatile electronic data storage by using a crystalline oxide preferably having a perovskite structure. A multistage process comprising modification of conductivity and surface structure, deposition of electrodes and also electroforming enables switching between different interface states. The data are then stored in the form of resistance states of individual memory cells.
(FR) L'invention concerne un procédé de fabrication d'une mémoire de données électronique non volatile. Elle vise à résoudre le problème de la mémorisation électronique non volatile de données, par utilisation d'un oxyde cristallin présentant de préférence une structure pérovskite. Un processus en plusieurs étapes, qui consiste en une modification de la conductivité et de la structure superficielle, en un dépôt des électrodes et en une activation électrique, permet une commutation entre différents états d'interface. Les données sont ensuite mémorisées sous la forme d'états de résistance de cellules de mémoire individuelles.
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