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1. WO2011105417 - SOLAR CELL

Publication Number WO/2011/105417
Publication Date 01.09.2011
International Application No. PCT/JP2011/053951
International Filing Date 23.02.2011
IPC
H01L 31/04 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
H01L 31/02167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
H01L 31/0376
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0376including amorphous semiconductors
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Applicants
  • 三洋電機株式会社 SANYO Electric Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 馬場 俊明 BABA Hideaki [JP]/[JP] (UsOnly)
Inventors
  • 馬場 俊明 BABA Hideaki
Agents
  • 角谷 浩 KADOYA Hiroshi
Priority Data
2010-03797123.02.2010JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLAR CELL
(FR) CELLULE SOLAIRE
(JA) 太陽電池
Abstract
(EN) Disclosed is a solar cell, of which the open circuit voltage can be increased without relying on the decrease in rebinding in crystalline silicon. Specifically disclosed is a solar cell (10) comprising a crystalline Si layer (50) having a pn junction and a semiconductor layer (60) formed on a first main surface (50as) of the crystalline Si layer (50). The semiconductor layer (60) has the same conduction type as that of a part of the crystalline Si layer (50) which is in contact with the semiconductor layer (60). The open circuit voltage applied to the solar cell (10) upon the irradiation with light is different from the difference between the quasi Fermi level of electrons and the quasi Fermi level of holes in the crystalline Si layer (50).
(FR) L'invention porte sur une cellule solaire dont la tension en circuit ouvert peut être accrue sans compter sur la diminution de reformation de liaison dans du silicium cristallin. L'invention concerne spécifiquement une cellule solaire (10) comprenant une couche de Si cristallin (50) ayant une jonction pn et une couche semi-conductrice (60) formée sur une première surface principale (50as) de la couche de Si cristallin (50). La couche semi-conductrice (60) a le même type de conductivité que celui d'une partie de la couche de Si cristallin (50) qui est en contact avec la couche semi-conductrice (60). La tension en circuit ouvert appliquée à la cellule solaire (10) lors d'une exposition à la lumière est différente de la différence entre le quasi niveau de Fermi d'électrons et le quasi niveau de Fermi de trous dans la couche de Si cristallin (50).
(JA) 【課題】結晶シリコンにおける再結合の低減に依存せずに開放電圧を増大し得る太陽電池を提供する。 【解決手段】、太陽電池10は、pn接合を有する結晶Si層50と、結晶Si層50の第1主面50as上に形成された半導体層60とを備える。半導体層60は、結晶Si層50の半導体層60と接触している部分の導電型と同じ導電型を有する。太陽電池10への光照射時の開放電圧は、結晶Si層50内における電子の擬フェルミ準位とホールの擬フェルミ準位との準位差と異なる。
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