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1. (WO2011102233) SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2011/102233 International Application No.: PCT/JP2011/052308
Publication Date: 25.08.2011 International Filing Date: 28.01.2011
IPC:
G11C 11/405 (2006.01) ,G11C 11/407 (2006.01) ,H01L 21/8242 (2006.01) ,H01L 21/8247 (2006.01) ,H01L 27/10 (2006.01) ,H01L 27/108 (2006.01) ,H01L 27/115 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
403
with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
405
with three charge-transfer gates, e.g. MOS transistors, per cell
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407
for memory cells of the field-effect type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8242
Dynamic random access memory structures (DRAM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
8247
electrically-programmable (EPROM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
108
Dynamic random access memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
Applicants:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 398, Hase, Atsugi-shi, Kanagawa 2430036, JP (AllExceptUS)
MATSUZAKI, Takanori [JP/JP]; JP (UsOnly)
KATO, Kiyoshi; null (UsOnly)
INOUE, Hiroki; null (UsOnly)
NAGATSUKA, Shuhei; null (UsOnly)
Inventors:
MATSUZAKI, Takanori; JP
KATO, Kiyoshi; null
INOUE, Hiroki; null
NAGATSUKA, Shuhei; null
Priority Data:
2010-03538519.02.2010JP
2010-06404819.03.2010JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR
Abstract:
(EN) An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
(FR) L'invention a pour objectif de proposer un dispositif semi-conducteur avec une nouvelle structure, qui peut conserver des données enregistrées même lorsqu'il est hors tension et possède un nombre illimité de cycles d'écriture. Un dispositif semi-conducteur est formé au moyen d'un matériau capable de réduire suffisamment le courant à l'état ouvert d'un transistor, par exemple un matériau semi-conducteur d'oxyde qui est un semi-conducteur à large bande interdite. L'utilisation d'un matériau semi-conducteur capable de réduire suffisamment le courant à l'état ouvert d'un transistor permet de conserver des données pendant une longue durée. De plus, la synchronisation d'un changement potentiel dans une ligne de signal est retardée par rapport à la synchronisation d'un changement potentiel dans une ligne d'écriture de mots. Cela permet d'éviter une erreur d'écriture de données.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN102754163