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1. WO2011101993 - SOLAR CELL AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2011/101993
Publication Date 25.08.2011
International Application No. PCT/JP2010/052652
International Filing Date 22.02.2010
IPC
H01L 51/42 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/03529
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035272characterised by at least one potential jump barrier or surface barrier
03529Shape of the potential jump barrier or surface barrier
H01L 31/1864
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1864Annealing
H01L 51/0026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0026Thermal treatment of the active layer, e.g. annealing
H01L 51/0027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0026Thermal treatment of the active layer, e.g. annealing
0027using coherent electromagnetic radiation, e.g. laser annealing
Applicants
  • 株式会社 東芝 KABUSHIKI KAISHA TOSHIBA [JP]/[JP] (AllExceptUS)
  • 斉藤 三長 SAITO, Mitsunaga [JP]/[JP] (UsOnly)
  • 細矢 雅弘 HOSOYA, Masahiro [JP]/[JP] (UsOnly)
Inventors
  • 斉藤 三長 SAITO, Mitsunaga
  • 細矢 雅弘 HOSOYA, Masahiro
Agents
  • 鈴江 武彦 SUZUYE, Takehiko
Priority Data
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLAR CELL AND METHOD FOR MANUFACTURING SAME
(FR) CELLULE SOLAIRE ET PROCÉDÉ DE FABRICATION DE CELLE-CI
(JA) 太陽電池およびその製造方法
Abstract
(EN) Disclosed is a method for manufacturing a solar cell, wherein a hetero junction photoelectric conversion layer (13), including a p-type semiconductor and an n-type semiconductor, is formed between a pair of electrodes (11, 12) which are disposed by being spaced apart from each other, thermal annealing is performed, while applying an alternating current voltage at a frequency of 0.01kHz-1kHz to the photoelectric conversion layer (13), and the mixing state of the p-type semiconductor and the n-type semiconductor in the photoelectric conversion layer (13) is controlled.
(FR) L'invention concerne un procédé de fabrication d'une cellule solaire, dans lequel une couche de conversion photoélectrique à hétérojonction (13), comprenant un semi-conducteur de type p et un semi-conducteur de type n, est formée entre une paire d'électrodes (11, 12) qui sont disposées écartées l'une de l'autre, un recuit thermique est réalisé, tout en appliquant une tension alternative à une fréquence de 0,01 kHz à 1 kHz à la couche de conversion photoélectrique (13), et l'état de mélange du semi-conducteur de type p et du semi-conducteur de type n dans la couche de conversion photoélectrique (13) est contrôlé.
(JA)  本発明の太陽電池の製造方法は、互いに離間して配置された一対の電極11および12の間に、p型半導体とn型半導体とを含むヘテロ接合型の光電変換層13を形成し、前記光電変換層13に周波数が0.01kHz以上1kHz未満の交流電圧を印加しながら熱アニーリングを行い、前記光電変換層13における前記p型半導体と前記n型半導体の混合状態を制御することを特徴とする
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