WO2011096914 METHODS OF MAKING COPPER SELENIUM PRECURSOR COMPOSITIONS WITH A TARGETED COPPER SELENIDE CONTENT AND PRECURSOR COMPOSITIONS AND THIN FILMS RESULTING THEREFROM

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Publication Number WO/2011/096914

Publication Date 11.08.2011

International Application No. PCT/US2010/000311

International Filing Date 04.02.2010

IPC

CPC

Applicants

HELIOVOLT CORPORATION [US]/[US] (AllExceptUS)
ALLIANCE FOR SUSTAINABLE ENERGY, LLC [US]/[US] (AllExceptUS)
CURTIS, Calvin, J. [US]/[US] (UsOnly)
MIEDANER, Alexander [US]/[US] (UsOnly)
LEISCH, Jennifer [US]/[US] (UsOnly)
VAN HEST, Marinus Franciscus, Antonius Maria [NL]/[US] (UsOnly)
GINLEY, David, S. [US]/[US] (UsOnly)
TAYLOR, Matthew [US]/[US] (UsOnly)
STANBERY, Billy, J. [US]/[US] (UsOnly)

Inventors

CURTIS, Calvin, J.
MIEDANER, Alexander
LEISCH, Jennifer
VAN HEST, Marinus Franciscus, Antonius Maria
GINLEY, David, S.
TAYLOR, Matthew
STANBERY, Billy, J.

Agents

KIPNES, Allen, R.

Priority Data

Publication Language English (en)

Filing Language English (EN)

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Title

(EN) METHODS OF MAKING COPPER SELENIUM PRECURSOR COMPOSITIONS WITH A TARGETED COPPER SELENIDE CONTENT AND PRECURSOR COMPOSITIONS AND THIN FILMS RESULTING THEREFROM

(FR) PROCÉDÉS DE PRÉPARATION DE COMPOSITIONS PRÉCURSEURS DE SÉLÉNIUM DE CUIVRE AYANT UNE TENEUR DE SÉLÉNIURE DE CUIVRE CIBLÉE, COMPOSITIONS PRÉCURSEURS ET FILMS MINCES OBTENUS À PARTIR DE CELLES-CI

Abstract

(EN) Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of-heating-controls the formation of a targeted species of copper selenide.

(FR) Cette invention concerne des compositions précurseurs contenant du cuivre et du sélénium se prêtant au dépôt sur un substrat pour former des films minces destinés à être utilisés dans des applications de semi-conducteurs. Des procédés pour former lesdites compositions précurseurs à l'aide de solvants de type amine primaire et des procédés pour former lesdits films minces sont décrits. Dans lesdits procédés, le choix de la température et de la durée de chauffage régit la formation d'une espèce ciblée de séléniure de cuivre.

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
G	COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
3	Compounds of copper
10	Sulfates

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
G	COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
3	Compounds of copper
10	Sulfates

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
B	NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
19	Selenium; Tellurium; Compounds thereof
04	Binary compounds ; including binary selenium-tellurium compounds

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
G	COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
3	Compounds of copper

C	CHEMISTRY; METALLURGY
01	INORGANIC CHEMISTRY
P	INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002	Crystal-structural characteristics
70	defined by measured X-ray, neutron or electron diffraction data
72	by d-values or two theta-values, e.g. as X-ray diagram

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1. WO2011096914 - METHODS OF MAKING COPPER SELENIUM PRECURSOR COMPOSITIONS WITH A TARGETED COPPER SELENIDE CONTENT AND PRECURSOR COMPOSITIONS AND THIN FILMS RESULTING THEREFROM