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1. WO2011096338 - TRANSPARENT-CONDUCTIVE-FILM-ATTACHED SUBSTRATE FOR SOLAR CELL, SOLAR CELL, AND PROCESSES FOR PRODUCTION OF THOSE PRODUCTS

Publication Number WO/2011/096338
Publication Date 11.08.2011
International Application No. PCT/JP2011/051784
International Filing Date 28.01.2011
IPC
H01L 31/04 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
B32B 15/04 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
15Layered products essentially comprising metal
04comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
C23C 14/08 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/34 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/58 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
58After-treatment
H01B 13/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
13Apparatus or processes specially adapted for manufacturing conductors or cables
CPC
B32B 15/04
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
15Layered products comprising ; a layer of; metal
04comprising metal as the main or only constituent of a layer, ; which is; next to another layer of ; the same or of; a ; different material
B32B 2307/202
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
2307Properties of the layers or laminate
20having particular electrical or magnetic properties, e.g. piezoelectric
202Conductive
B32B 2307/412
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
2307Properties of the layers or laminate
40having particular optical properties
412Transparent
B32B 2307/538
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
2307Properties of the layers or laminate
50having particular mechanical properties
538Roughness
B32B 2307/702
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
2307Properties of the layers or laminate
70Other properties
702Amorphous
B32B 2307/704
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
2307Properties of the layers or laminate
70Other properties
704Crystalline
Applicants
  • 株式会社アルバック ULVAC, Inc. [JP]/[JP] (AllExceptUS)
  • 三菱瓦斯化学株式会社 Mitsubishi Gas Chemical Company, Inc. [JP]/[JP] (AllExceptUS)
  • 高橋 明久 TAKAHASHI Hirohisa [JP]/[JP] (UsOnly)
  • 内田 寛人 UCHIDA Hiroto [JP]/[JP] (UsOnly)
  • 宇佐美 達己 USAMI Tatsumi [JP]/[JP] (UsOnly)
  • 松崎 淳介 MATSUZAKI Junsuke [JP]/[JP] (UsOnly)
  • 植 喜信 UE Yoshinobu [JP]/[JP] (UsOnly)
  • 小林 忠正 KOBAYASHI Tadamasa [JP]/[JP] (UsOnly)
  • 今北 健一 IMAKITA Kenichi [JP]/[JP] (UsOnly)
  • 佐見津 祥二 SAMITSU Shoji [JP]/[JP] (UsOnly)
  • 山本 良明 YAMAMOTO Yoshiaki [JP]/[JP] (UsOnly)
  • 朝比奈 伸一 ASAHINA Shinichi [JP]/[JP] (UsOnly)
  • 斎藤 一也 SAITO Kazuya [JP]/[JP] (UsOnly)
  • 松原 将英 MATSUBARA Masahide [JP]/[JP] (UsOnly)
  • 岡部 哲 OKABE Satoshi [JP]/[JP] (UsOnly)
  • 後藤 敏之 GOTOU Toshiyuki [JP]/[JP] (UsOnly)
  • 丸山 岳人 MARUYAMA Taketo [JP]/[JP] (UsOnly)
Inventors
  • 高橋 明久 TAKAHASHI Hirohisa
  • 内田 寛人 UCHIDA Hiroto
  • 宇佐美 達己 USAMI Tatsumi
  • 松崎 淳介 MATSUZAKI Junsuke
  • 植 喜信 UE Yoshinobu
  • 小林 忠正 KOBAYASHI Tadamasa
  • 今北 健一 IMAKITA Kenichi
  • 佐見津 祥二 SAMITSU Shoji
  • 山本 良明 YAMAMOTO Yoshiaki
  • 朝比奈 伸一 ASAHINA Shinichi
  • 斎藤 一也 SAITO Kazuya
  • 松原 将英 MATSUBARA Masahide
  • 岡部 哲 OKABE Satoshi
  • 後藤 敏之 GOTOU Toshiyuki
  • 丸山 岳人 MARUYAMA Taketo
Agents
  • 志賀 正武 SHIGA Masatake
Priority Data
2010-02140702.02.2010JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) TRANSPARENT-CONDUCTIVE-FILM-ATTACHED SUBSTRATE FOR SOLAR CELL, SOLAR CELL, AND PROCESSES FOR PRODUCTION OF THOSE PRODUCTS
(FR) SUBSTRAT AUQUEL EST ATTACHÉ UN FILM CONDUCTEUR TRANSPARENT POUR PILE SOLAIRE, PILE SOLAIRE, ET PROCÉDÉS DE FABRICATION DE CES PRODUITS
(JA) 太陽電池用透明導電膜付き基板、太陽電池及びそれらの製造方法
Abstract
(EN) Disclosed is a process for producing a solar cell comprising: a transparent substrate; a transparent conductive film arranged on the transparent substrate and containing ZnO as the main component; a pin-type photoelectric conversion unit formed by laminating a first p layer, a first i layer and a first n layer which are amorphous silicon thin films in this order; and an intermediate layer arranged between the transparent conductive film and the first p layer and comprising a second p layer that is a crystalline silicon thin film. Specifically disclosed is a process for producing a solar cell, which comprises at least the sequential steps of: applying a sputter voltage to a target that serves as a base material for the transparent substrate in an atmosphere of a desired process gas to achieve sputtering, thereby forming the transparent conductive film on the transparent substrate; subjecting the transparent conductive film to a wet etching procedure to form a fine texture on the surface of the transparent conductive film; forming the intermediate layer on the transparent conductive film; and forming the first p layer, the first i layer and the first n layer in this order on the intermediate layer.
(FR) L'invention concerne un procédé de fabrication d'une pile solaire qui comporte : un substrat transparent ; un film conducteur transparent disposé sur le substrat transparent et contenant ZnO en tant que composant principal ; une unité de conversion photoélectrique de type épingle formée par stratification, dans cet ordre, d'une première couche p, d'une première couche i et d'une première couche n, qui sont des films minces de silicium amorphes, et une couche intermédiaire disposée entre le film conducteur transparent et la première couche p et comportant une seconde couche p qui est un film mince de silicium cristallin. L'invention concerne particulièrement un procédé de fabrication d'une pile solaire, qui comporte au moins les étapes séquentielles consistant : à appliquer une tension de pulvérisation cathodique à une cible qui sert de matériau de base au substrat transparent dans une atmosphère d'un gaz de traitement voulu pour effectuer la pulvérisation cathodique, permettant ainsi de former le film conducteur transparent sur le substrat transparent ; à soumettre le film conducteur transparent à une technique de gravure humide pour former une texture fine sur la surface du film conducteur transparent ; à former la couche intermédiaire sur le film conducteur transparent et à former la première couche p, la première couche i et la première couche n, dans cet ordre, sur la couche intermédiaire.
(JA)  本発明は、透明基板と;前記透明基板に設けられる、ZnOを主成分とする透明導電膜と;アモルファスのシリコン系薄膜である第1のp層、i層、n層が積層されて形成されるpin型の光電変換ユニットと;前記透明導電膜と、前記第1のp層との間に配される、結晶質のシリコン系薄膜である第2のp層により形成される中間層と;を備える太陽電池の製造方法であって、所望のプロセスガス雰囲気中にて、前記透明導電膜の母材をなすターゲットにスパッタ電圧を印加してスパッタを行い、前記透明基板上に前記透明導電膜を成膜する工程と、前記透明導電膜に対してウェットエッチングを行い、前記透明導電膜の表面に微細テクスチャーを形成する工程と、前記透明導電膜上に、前記中間層を形成する工程と、前記中間層上に、前記第1のp層、前記i層、及び前記n層を順に形成する工程と、を少なくとも順に備える太陽電池の製造方法を提供する。
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