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1. (WO2011086650) METHOD FOR MANUFACTURING SINTERED LICOO2, AND SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2011/086650 International Application No.: PCT/JP2010/007510
Publication Date: 21.07.2011 International Filing Date: 24.12.2010
IPC:
C04B 35/00 (2006.01) ,C23C 14/34 (2006.01) ,H01M 4/525 (2010.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
M
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
4
Electrodes
02
Electrodes composed of, or comprising, active material
36
Selection of substances as active materials, active masses, active liquids
48
of inorganic oxides or hydroxides
52
of nickel, cobalt or iron
525
of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
Applicants:
株式会社アルバック ULVAC, INC. [JP/JP]; 神奈川県茅ヶ崎市萩園2500番地 2500 Hagisono, Chigasaki-shi, Kanagawa 2538543, JP (AllExceptUS)
金 豊 KIM, Poong [KR/JP]; JP (UsOnly)
鄒 弘綱 SUU, Koukou [JP/JP]; JP (UsOnly)
橋口 正一 HASHIGUCHI, Shouichi [JP/JP]; JP (UsOnly)
三ヶ島 隆則 MIKASHIMA, Takanori [JP/JP]; JP (UsOnly)
上園 涼太 UEZONO, Ryouta [JP/JP]; JP (UsOnly)
Inventors:
金 豊 KIM, Poong; JP
鄒 弘綱 SUU, Koukou; JP
橋口 正一 HASHIGUCHI, Shouichi; JP
三ヶ島 隆則 MIKASHIMA, Takanori; JP
上園 涼太 UEZONO, Ryouta; JP
Agent:
大森 純一 OMORI, Junichi; 東京都港区赤坂7-5-47 U&M赤坂ビル2F 2nd Floor U&M Akasaka Bldg., 7-5-47 Akasaka, Minato-ku, Tokyo 1070052, JP
Priority Data:
2010-00675315.01.2010JP
Title (EN) METHOD FOR MANUFACTURING SINTERED LICOO2, AND SPUTTERING TARGET
(FR) PROCÉDÉ DE FABRICATION DE LICOO2 FRITTÉ, ET CIBLE DE PULVÉRISATION
(JA) LiCoO焼結体の製造方法及びスパッタリングターゲット
Abstract:
(EN) Provided is a method for stably manufacturing high-density sintered LiCoO2. Said method uses a CIP-and-sintering method, which has a forming step using cold hydrostatic pressing and a sintering step. The pressing force is at least 1000 kg/cm², the sintering temperature is between 1050°C and 1120°C, and the sintering time is at least two hours. This makes it possible to stably manufacture sintered LiCoO2 with a relative density of at least 90%, a resistivity of at most 3 kΩ∙cm, and a mean grain diameter between 20 and 50 μm.
(FR) La présente invention concerne un procédé permettant de fabriquer de façon stable un LiCoO2 fritté à haute densité. Ce procédé met en œuvre une procédure à compression isostatique à froid et frittage, laquelle compression comporte une étape de formage faisant intervenir la compression hydrostatique à froid et une étape de frittage. La force de compression est d'au moins 1000 kg/cm2, la température de frittage se situe entre 1050°C et 1120°C, et le temps de frittage est d'au moins deux heures. Cela permet de fabriquer de façon stable un LiCoO2 fritté présentant une densité relative d'au moins 90%, une résistivité d'au maximum 3 kΩ·cm, et un diamètre de grain moyen se situant entre 20 et 50 µm.
(JA) 【課題】高密度な焼結体を安定して製造することができるLiCoO焼結体の製造方法を提供する。 【解決手段】本発明の一実施形態に係るLiCoO焼結体の製造方法は、冷間静水圧プレス法による成形工程と焼結工程とを有する、CIP&Sintering法が採用される。成形圧力は1000kg/cm以上、焼結温度は1050℃以上1120℃以下、焼結時間は2時間以上とする。これにより、90%以上の相対密度と、3kΩ・cm以下の比抵抗と、20μm以上50μm以下の平均粒径とを有するLiCoO焼結体を安定して製造することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2532634US20120305392JPWO2011086650CN102770392KR1020120101505