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1. WO2011078968 - METHOD AND SYSTEM FOR FRACTURING A PATTERN, AND FOR CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES

Publication Number WO/2011/078968
Publication Date 30.06.2011
International Application No. PCT/US2010/059345
International Filing Date 07.12.2010
IPC
H01J 37/317 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 1/14 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
14Originals characterised by structural details, e.g. supports, cover layers, pellicle rings
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
H01J 37/3174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3174Particle-beam lithography, e.g. electron beam lithography
Applicants
  • D2S, INC. [US]/[US] (AllExceptUS)
  • ZABLE, Harold Robert [US]/[US] (UsOnly)
  • FUJIMURA, Akira [JP]/[US] (UsOnly)
Inventors
  • ZABLE, Harold Robert
  • FUJIMURA, Akira
Agents
  • MUELLER, Heather
Priority Data
12/647,45226.12.2009US
12/647,45326.12.2009US
12/647,45426.12.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND SYSTEM FOR FRACTURING A PATTERN, AND FOR CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES
(FR) PROCÉDÉ ET SYSTÈME PERMETTANT DE FRACTURER UN MOTIF À L'AIDE D'UNE LITHOGRAPHIE À FAISCEAU DE PARTICULES CHARGÉES RÉALISANT DE MULTIPLES PASSAGES D'EXPOSITION
Abstract
(EN)
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction using a plurality of exposure passes is disclosed. In one embodiment, base dosages for the plurality of exposure passes are different from each other. In another embodiment, the union of shots from one of the exposure passes is different than the union of shots from a different exposure pass. In a further embodiment, the sum of the base dosage levels for the plurality of exposure passes does not equal a normal dosage. Similar methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed.
(FR)
Dans le domaine de la production de semi-conducteurs à l'aide de la lithographie à faisceau de particules chargées, l'invention concerne un procédé et un système pour la fracturation ou la préparation de données de masque ou la correction d'un effet de proximité à l'aide de plusieurs passages d'exposition. Dans un mode de réalisation, les dosages de base pour la pluralité de passages d'exposition sont différents les uns des autres. Dans un autre mode de réalisation, l'association des décharges de l'un des passages d'exposition est différente de l'association des décharges d'un autre passage d'exposition. Dans un mode de réalisation supplémentaire, la somme des niveaux de dosage de base pour la pluralité de passages d'exposition n'est pas égale à un dosage normal. L'invention concerne également des procédés semblables pour la fabrication d'un réticule et la fabrication d'un circuit intégré.
Also published as
Latest bibliographic data on file with the International Bureau