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1. WO2011078299 - METHOD FOR FORMING BOND BETWEEN DIFFERENT ELEMENTS

Publication Number WO/2011/078299
Publication Date 30.06.2011
International Application No. PCT/JP2010/073255
International Filing Date 23.12.2010
IPC
H01L 21/265 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
H01L 21/318 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
318composed of nitrides
H05H 1/24 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
CPC
B01J 19/081
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
19Chemical, physical or physico-chemical processes in general; Their relevant apparatus
08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
081employing particle radiation or gamma-radiation
B01J 19/087
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
19Chemical, physical or physico-chemical processes in general; Their relevant apparatus
08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
087employing electric or magnetic energy
C08J 2383/16
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G
2383Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
16in which all the silicon atoms are connected by linkages other than oxygen atoms
C08J 3/28
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G
3Processes of treating or compounding macromolecular substances
28Treatment by wave energy or particle radiation
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
Applicants
  • 日産化学工業株式会社 NISSAN CHEMICAL INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • 古性 均 FURUSHO, Hitoshi [JP]/[JP] (UsOnly)
  • 野原 雄貴 NOHARA, Yuki [JP]/[JP] (UsOnly)
  • 渡邊 久幸 WATANABE, Hisayuki [JP]/[JP] (UsOnly)
  • 後藤 裕一 GOTO, Yuichi [JP]/[JP] (UsOnly)
Inventors
  • 古性 均 FURUSHO, Hitoshi
  • 野原 雄貴 NOHARA, Yuki
  • 渡邊 久幸 WATANABE, Hisayuki
  • 後藤 裕一 GOTO, Yuichi
Agents
  • 萼 経夫 HANABUSA, Tsuneo
Priority Data
2009-29230024.12.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR FORMING BOND BETWEEN DIFFERENT ELEMENTS
(FR) PROCÉDÉ DE FORMATION D'UNE LIAISON ENTRE DIFFÉRENTS ÉLÉMENTS
(JA) 異種元素結合形成法
Abstract
(EN)
A doping technique is provided with which an amorphous silicon film and a polycrystalline silicon film which are stable are formed at a low temperature and, simultaneously therewith, conductivity is imparted thereto in an atmospheric-pressure environment. The technique is a process for producing a compound containing a bond between different elements belonging to Groups 4 to 15 of the periodic table, the process being characterized by: applying a high voltage, at a low frequency and atmospheric pressure, either to an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or insulator tube or between flat electrode plates while passing a gas through the electric discharge tube or the space between the flat electrode plates, thereby converting the molecules present in the discharge tube or between the flat electrode plates into a plasma; and applying the plasma to two or more elemental substances or compounds. The compound containing a bond between different elements is a compound containing a bond between different elements belonging to Groups 13 to 15 of the periodic table. Also disclosed is the process which includes applying either the plasma or radicals of a surrounding gas excited by the plasma and irradiating ultraviolet rays.
(FR)
L'invention concerne une technique de dopage avec laquelle une pellicule de silicium amorphe et une pellicule de silicium polycristallin qui sont stables sont formées à basse température, et simultanément, une conductivité leur est impartie dans un environnement à pression atmosphérique. La technique est un processus servant à produire un composé contenant une liaison entre différents éléments appartenant aux groupes 4 à 15 du tableau périodique, le processus étant caractérisé en ce que : l'on applique une haute tension, à basse fréquence et à pression atmosphérique, soit à un tube de décharge électrique obtenu en fixant des électrodes à haute tension à un tube de métal ou à un tube isolant soit entre des plaques d'électrodes plates tout en faisant passer un gaz à travers le tube de décharge électrique ou l'espace entre les plaques d'électrodes plates, convertissant ainsi les molécules présentes dans le tube de décharge ou entre les plaques d'électrodes plates en un plasma ; et en ce que l'on applique le plasma à deux ou plusieurs substances élémentaires ou composés. Le composé contenant une liaison entre différents éléments est un composé contenant une liaison entre différents éléments appartenant aux groupes 13 à 15 du tableau périodique. L'invention concerne aussi le processus qui consiste à appliquer soit le plasma soit les radicaux d'un gaz environnant excité par le plasma et à irradier de rayons ultraviolets.
(JA)
【課題】 低温で、安定なアモルファスシリコン膜及び多結晶シリコン膜を形成すると同時に大気圧環境下における導電性を付与するドーピング技術を提供する。 【解決手段】 大気圧下において金属管又は絶縁体管に高電圧電極を取り付けた放電管内又は平板電極間に導入ガスを流しながら低周波数で高電圧を印加させることにより放電管内又は平板電極間に存在する分子をプラズマ化させ、そのプラズマを2種以上の元素単体又は化合物に照射することを特徴とする周期律表の第4族元素乃至第15族元素間の異種元素結合を含む化合物の製造方法。上記異種元素結合を含む化合物が、周期律表の第13族元素乃至第15族元素間の異種元素結合を含む化合物である。上記プラズマ又はプラズマにより励起された周囲ガスのラジカルを照射すると共に、更に紫外線を照射する製造方法。
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