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1. WO2011074488 - MAGNETIC SENSOR

Publication Number WO/2011/074488
Publication Date 23.06.2011
International Application No. PCT/JP2010/072205
International Filing Date 10.12.2010
IPC
G01R 33/09 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
09Magneto-resistive devices
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
CPC
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
G01R 33/093
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
09Magnetoresistive devices
093using multilayer structures, e.g. giant magnetoresistance sensors
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
Applicants
  • アルプス電気株式会社 ALPS ELECTRIC CO., LTD. [JP]/[JP] (AllExceptUS)
  • 安藤 秀人 ANDO, Hideto [JP]/[JP] (UsOnly)
  • 杉原 真次 SUGIHARA, Shinji [JP]/[JP] (UsOnly)
  • 野口 貴史 NOGUCHI, Takafumi [JP]/[JP] (UsOnly)
Inventors
  • 安藤 秀人 ANDO, Hideto
  • 杉原 真次 SUGIHARA, Shinji
  • 野口 貴史 NOGUCHI, Takafumi
Agents
  • 野▲崎▼ 照夫 NOZAKI, Teruo
Priority Data
2009-28416015.12.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MAGNETIC SENSOR
(FR) CAPTEUR MAGNÉTIQUE
(JA) 磁気センサ
Abstract
(EN)
Disclosed is a magnetic sensor having better disturbance magnetic field resistance than conventional ones. Specifically disclosed is a magnetic sensor provided with a magnetoresistive effect element (13) which is connected between electrode pads (11, 12) and produces a magnetoresistive effect, and a permanent magnet layer (14) for supplying a bias magnetic field to the magnetoresistive effect element (13). The magnetoresistive effect element (13) comprises a first region (20) and a second region (21). A first bias magnetic field (H1) is supplied from the permanent magnet layer (14) to the first region (20) in the direction orthogonal to the sensitivity axis direction (X1-X2) of the magnetoresistive effect element (13), and a second bias magnetic field (H2) is supplied from the permanent magnet layer (14) to the second region (21) in the direction opposite to that of the first bias magnetic field (H1).
(FR)
L'invention concerne un capteur magnétique présentant une meilleure résistance aux champs magnétiques perturbateurs que les capteurs classiques. L'invention concerne en particulier un capteur magnétique pourvu d'un élément à effet de magnétorésistance (13) connecté entre des pastilles d'électrode (11, 12) et produisant un effet de magnétorésistance, et d'une couche d'aimant permanent (14) destinée à fournir un champ magnétique de polarisation à l'élément à effet de magnétorésistance (13). Ce dernier (13) comprend une première zone (20) et une deuxième zone (21). Un premier champ magnétique de polarisation (H1) est acheminé de la couche d'aimant permanent (14) à la première zone (20) dans le sens perpendiculaire au sens de l'axe de sensibilité (X1-X2) de l'élément à effet de magnétorésistance (13), et un deuxième champ magnétique de polarisation (H2) est acheminé de la couche d'aimant permanent (14) à la deuxième zone (21) dans le sens opposé au sens du premier champ magnétique de polarisation (H1).
(JA)
【課題】 特に、従来に比べて外乱磁場耐性に優れた磁気センサを提供することを目的とする。 【解決手段】 電極パッド11,12間に接続される磁気抵抗効果を発揮する磁気抵抗効果素子13と、前記磁気抵抗効果素子13にバイアス磁界を供給するための永久磁石層14とを備え、前記磁気抵抗効果素子13は第1の領域20と第2の領域21とを有し、前記第1の領域20には、前記磁気抵抗効果素子13の感度軸方向(X1-X2)と直交する方向に前記永久磁石層14から第1のバイアス磁界H1が供給され、前記第2の領域21には前記永久磁石層14から前記第1のバイアス磁界H1とは逆方向の第2のバイアス磁界H2が供給されることを特徴とする。
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