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1. WO2011074440 - GAS BARRIER FILM, METHOD FOR PRODUCING GAS BARRIER FILM, AND ORGANIC PHOTOELECTRIC CONVERSION ELEMENT

Publication Number WO/2011/074440
Publication Date 23.06.2011
International Application No. PCT/JP2010/071875
International Filing Date 07.12.2010
IPC
B32B 9/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/02 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
02Details
CPC
B32B 2307/7244
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
2307Properties of the layers or laminate
70Other properties
724Permeability to gases, adsorption
7242Non-permeable
7244Oxygen barrier
B32B 9/04
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9Layered products comprising a ; layer of a; particular substance not covered by groups B32B11/00 - B32B29/00
04comprising such ; particular; substance as the main or only constituent of a layer, ; which is; next to another layer of ; the same or of; a ; different material
H01L 51/42
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
H01L 51/448
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
44Details of devices
448Passivation, containers, encapsulations
Y02E 10/549
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
549Organic PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • コニカミノルタホールディングス株式会社 Konica Minolta Holdings, Inc. [JP]/[JP] (AllExceptUS)
  • 竹村 千代子 TAKEMURA Chiyoko [JP]/[JP] (UsOnly)
  • 河村 朋紀 KAWAMURA Tomonori [JP]/[JP] (UsOnly)
Inventors
  • 竹村 千代子 TAKEMURA Chiyoko
  • 河村 朋紀 KAWAMURA Tomonori
Priority Data
2009-28257014.12.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GAS BARRIER FILM, METHOD FOR PRODUCING GAS BARRIER FILM, AND ORGANIC PHOTOELECTRIC CONVERSION ELEMENT
(FR) FILM BARRIÈRE AUX GAZ, PROCÉDÉ DE FABRICATION DU FILM BARRIÈRE AUX GAZ ET ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE ORGANIQUE
(JA) ガスバリアフィルム、ガスバリアフィルムの製造方法及び有機光電変換素子
Abstract
(EN)
Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a base in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion intensity in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion intensity is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film.
(FR)
L'invention concerne un film barrière aux gaz qui possède à la fois une performance élevée de barrière aux gaz et une résistance élevée à la fissuration (flexion). De façon spécifique, l'invention concerne un film barrière aux gaz qui comprend, sur une base dans l'ordre suivant, au moins une couche à teneur en silanol et au moins une couche barrière aux gaz qui contient des atomes de silicium et des atomes d'hydrogène. Le film barrière aux gaz est caractérisé en ce que l'intensité relative des ions SiOH dans la partie centrale de la couche à teneur en silanol dans la direction de l'épaisseur du film telle que détectée par spectrométrie de masse à ionisation secondaire à temps de vol (Tof-SIMS) est de 0,02 à 1,0 lorsque l'intensité relative des ions Si est prise comme étant de 1. L'invention concerne également un élément de conversion photoélectrique organique qui comprend le film barrière aux gaz.
(JA)
 高いガスバリア性能と、ヒビ割れ(屈曲)耐性を両立したガスバリアフィルム、具体的には、基材上に少なくとも1層のシラノール含有層と、ケイ素原子及び酸素原子を含有する少なくとも1層のガスバリア層をこの順に有するガスバリアフィルムにおいて、該シラノール含有層の膜深さ方向における膜中央部から飛行時間型二次イオン質量分析法(Tof-SIMS)によって検出される相対SiOHイオン強度が、相対Siイオン強度を1としたときに、0.02~1.0であることを特徴とするガスバリアフィルム提供する。また、該ガスバリアフィルムを有する有機光電変換素子を提供する。
Also published as
Latest bibliographic data on file with the International Bureau