Processing

Please wait...

Settings

Settings

Goto Application

1. WO2011074214 - MOISTURE-RESISTANT FILM, METHOD FOR PRODUCING SAME, AND ORGANIC ELECTRONIC DEVICE COMPRISING THE MOISTURE-RESISTANT FILM

Publication Number WO/2011/074214
Publication Date 23.06.2011
International Application No. PCT/JP2010/007173
International Filing Date 09.12.2010
IPC
B32B 9/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/02 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
02Details
CPC
C23C 14/0676
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
0676Oxynitrides
C23C 16/30
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/308
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
308Oxynitrides
H01L 51/5256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5237Passivation; Containers; Encapsulation, e.g. against humidity
5253Protective coatings
5256having repetitive multilayer structures
Y10T 428/12236
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
12All metal or with adjacent metals
12229Intermediate article [e.g., blank, etc.]
12236Panel having nonrectangular perimeter
Y10T 428/24992
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
428Stock material or miscellaneous articles
24Structurally defined web or sheet [e.g., overall dimension, etc.]
24942including components having same physical characteristic in differing degree
24992Density or compression of components
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • 二星学 NIBOSHI, Manabu (UsOnly)
Inventors
  • 二星学 NIBOSHI, Manabu
Agents
  • 前田弘 MAEDA, Hiroshi
Priority Data
2009-28316314.12.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MOISTURE-RESISTANT FILM, METHOD FOR PRODUCING SAME, AND ORGANIC ELECTRONIC DEVICE COMPRISING THE MOISTURE-RESISTANT FILM
(FR) FILM RÉSISTANT À L'HUMIDITÉ, PROCÉDÉ POUR SA PRODUCTION ET DISPOSITIF ÉLECTRONIQUE ORGANIQUE COMPRENANT LE FILM RÉSISTANT À L'HUMIDITÉ
(JA) 防湿フィルム及びその製造方法、並びにそれを備えた有機電子デバイス
Abstract
(EN)
Disclosed is a moisture-resistant film (10) in which a moisture-resistant coating (12) is provided on the surface of a film main body (11). The moisture-resistant film (10) is characterized in that: the moisture-resistant coating (12) comprises a first layer (11a), which is composed of a silicon oxycarbonitride compound that contains a carbon atom in the composition, and a second layer (11b), which is composed of a silicon oxynitride compound that contains less carbon atoms than the first layer (11a) or has a composition that contains no carbon atom, and which has a higher density than the first layer (11a); the first layer (11a) and the second layer (11b) are laminated adjacent to each other; and the density of the first layer (11a) is increased toward the second layer (11b).
(FR)
L'invention porte sur un film résistant à l'humidité (10), dans lequel un revêtement résistant à l'humidité (12) est disposé sur la surface d'un corps principal de film (11). Le film résistant à l'humidité (10) est caractérisé en ce que : le revêtement résistant à l'humidité (12) comprend une première couche (11a), qui est constituée par un composé d'oxycarbonitrure de silicium qui contient un atome de carbone dans la composition, et une seconde couche (11b), qui est constituée par un composé d'oxynitrure de silicium qui contient moins d'atomes de carbone que la première couche (11a), ou qui a une composition qui ne contient pas d'atome de carbone, et qui a une densité supérieure à celle de la première couche (11a) ; la première couche (11a) et la seconde couche (11b) sont stratifiées au voisinage l'une de l'autre ; et la densité de la première couche (11a) est accrue vers la seconde couche (11b).
(JA)
 防湿フィルム(10)は、フィルム本体(11)の表面に防湿膜(12)が設けられたものであって、防湿膜(12)は、組成に炭素原子を含んだ酸化炭化窒化ケイ素化合物からなる第1層(11a)と、上記第1層(11a)よりも含有する炭素原子の少ない又は炭素原子を含まない組成の酸窒化ケイ素化合物からなり、該第1層(11a)よりも密度が大きい第2層(11b)と、を含み、上記第1層(11a)と上記第2層(11b)とは隣接して積層されており、上記第1層(11a)は上記第2層(11b)側にいくに従って密度が高くなっていることを特徴とする。
Latest bibliographic data on file with the International Bureau