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1. WO2011072964 - SEMICONDUCTOR LASER

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Publication Number WO/2011/072964
Publication Date 23.06.2011
International Application No. PCT/EP2010/067402
International Filing Date 12.11.2010
IPC
H01S 5/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
H01S 5/323 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
323in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
H01S 5/22 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
22having a ridge or a stripe structure
CPC
H01S 2304/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2304Special growth methods for semiconductor lasers
12Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
H01S 5/0201
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
H01S 5/0237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0235Method for mounting laser chips
02355Fixing laser chips on mounts
0237by soldering
H01S 5/0425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
H01S 5/04256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
04256characterised by the configuration
H01S 5/2201
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
2201in a specific crystallographic orientation
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE] (AllExceptUS)
  • DINI, Dimitri [IT]/[DE] (UsOnly)
  • SCHILLGALIES, Marc [DE]/[DE] (UsOnly)
Inventors
  • DINI, Dimitri
  • SCHILLGALIES, Marc
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
102009058345.915.12.2009DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HALBLEITERLASER
(EN) SEMICONDUCTOR LASER
(FR) LASER À SEMI-CONDUCTEUR
front page image
Abstract
(DE)
Es wird ein Halbleiterlaser (1) angegeben, der einen Halbleiterkörper (2) mit einem zur Erzeugung von Strahlung vorgesehenen aktiven Bereich (20) und einen stegförmigen Bereich (3) aufweist. Der stegförmige Bereich weist eine entlang einer Emissionsrichtung verlaufende Längsachse (30) auf, welche bezüglich einer in Emissionsrichtung verlaufenden Mittelachse (25) des Halbleiterkörpers in Querrichtung versetzt angeordnet. Weiterhin wird ein Verfahren zur Herstellung eines Halbleiterlasers angegeben.
(EN)
The invention relates to a semiconductor laser (1), which comprises a semiconductor body (2) having an active region (20) for generating radiation and a bridge-shaped region (3). According to the invention, the bridge-shaped region has a longitudinal axis (30) running along an emission direction, which is arranged offset in the transverse direction in relation to a center axis (25) running in the emission direction. The invention further relates to a method for producing a semiconductor laser.
(FR)
L'invention concerne un laser à semi-conducteur (1) qui comprend un corps semi-conducteur (2) présentant une zone active (20), destinée à la production d'un rayonnement, et une zone en forme de nervure (3). Cette zone en forme de nervure présente un axe longitudinal (30) s'étendant dans une direction d'émission et placé de manière décalée dans le sens transversal par rapport à un axe médian (25) du corps semi-conducteur, qui s'étend dans la direction d'émission. L'invention porte également sur un procédé de fabrication d'un laser à semi-conducteur.
Also published as
DE102009058345
EP2514049
US20120287956
CN102668277
KR1020120112559
JP2013513956
Latest bibliographic data on file with the International Bureau
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