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1. WO2011069344 - CHEMICAL-MECHANICAL POLISHING LIQUID

Publication Number WO/2011/069344
Publication Date 16.06.2011
International Application No. PCT/CN2010/002033
International Filing Date 13.12.2010
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/1463
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
1454Abrasive powders, suspensions and pastes for polishing
1463Aqueous liquid suspensions
H01L 21/3212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
32115Planarisation
3212by chemical mechanical polishing [CMP]
Applicants
  • 安集微电子(上海)有限公司 ANJI MICROELECTRONICS (SHANGHAI) CO., LTD. [CN]/[CN] (AllExceptUS)
  • 王晨 WANG, Chen [CN]/[CN] (UsOnly)
  • 何华锋 HE, Huafeng [CN]/[CN] (UsOnly)
Inventors
  • 王晨 WANG, Chen
  • 何华锋 HE, Huafeng
Agents
  • 上海翰鸿律师事务所 HANHONG LAW FIRM
Priority Data
200910200315.X11.12.2009CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) CHEMICAL-MECHANICAL POLISHING LIQUID
(FR) LIQUIDE DE POLISSAGE MÉCANO-CHIMIQUE
(ZH) 一种化学机械抛光液
Abstract
(EN)
A chemical-mechanical polishing liquid is provided. The polishing liquid contains water, an abrasive, an oxidant and a water-soluble cationic surfactant. The present polishing liquid can reduce and eliminate the noises from polishing, improve the operating environment, decrease the friction of a polishing pad, and prolong the service life of the polishing pad.
(FR)
L'invention concerne un liquide de polissage mécano-chimique. Le liquide de polissage contient de l'eau, un abrasif, un oxydant et un tensioactif cationique soluble dans l'eau. Le présent liquide de polissage peut réduire et éliminer les bruits du polissage, améliorer l'environnement de travail, réduire la friction d'un tampon de polissage et prolonger la durée de vie du tampon de polissage.
Also published as
Latest bibliographic data on file with the International Bureau