Processing

Please wait...

Settings

Settings

Goto Application

1. WO2011066746 - SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2011/066746
Publication Date 09.06.2011
International Application No. PCT/CN2010/074458
International Filing Date 25.06.2010
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 21/8238 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8238Complementary field-effect transistors, e.g. CMOS
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 21/26513
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
26513of electrically active species
H01L 21/2652
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
26513of electrically active species
2652Through-implantation
H01L 21/2658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
2658of a molecular ion, e.g. decaborane
H01L 21/26586
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26586characterised by the angle between the ion beam and the crystal planes or the main crystal surface
H01L 21/823842
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823828with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
823842gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
H01L 29/495
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
495the conductor material next to the insulator being a simple metal, e.g. W, Mo
Applicants
  • 中国科学院微电子研究所 INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES [CN]/[CN] (AllExceptUS)
  • 尹海洲 YIN, Haizhou [CN]/[US] (UsOnly)
  • 骆志炯 LUO, Zhijiong [CN]/[US] (UsOnly)
  • 朱慧珑 ZHU, Huilong [US]/[US] (UsOnly)
Inventors
  • 尹海洲 YIN, Haizhou
  • 骆志炯 LUO, Zhijiong
  • 朱慧珑 ZHU, Huilong
Agents
  • 北京市立方律师事务所 LIFANG & PARTNERS LAW FIRM
Priority Data
200910242097.604.12.2009CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ PERMETTANT DE LE FABRIQUER
(ZH) 一种半导体器件及其制造方法
Abstract
(EN)
A semiconductor device and a manufacturing method thereof are provided. The method is achieved by the means that performing Halo ion implantation to form a Halo ion-implanted region after annealing source/drain regions. The method includes providing a substrate (101); forming a source region, a drain region on the substrate and forming a gate stack which is comprised of a gate dielectric layer and a dummy gate between the source region and the drain region on the substrate (102); removing the dummy gate to expose the gate dielectric layer to form an opening (103); then performing an oblique Halo ion implantation in the substrate through the opening to form Halo ion-implanted regions at the both sides of the trench of the semiconductor device (104); annealing to active the Halo ion-implanted regions (105); performing subsequence processes according to the requirements of the manufacture process (106). The method can reduce the inappropriate introduction of the dopants of the Halo ion-implanted regions into the source region and the drain region in order to reduce the overlay between the Halo ion-implanted regions and the impurity regions of the source/drain region and to avoid the increase of the band-band leakage current in a MOSFET device, and improve the performance of the device.
(FR)
Cette invention se rapporte à un dispositif à semi-conducteur et à un procédé permettant de le fabriquer. Le procédé est réalisé en exécutant une implantation ionique de halo de façon à former une région à implantation ionique de halo après un recuit des régions de source/de drain. Le procédé comprend les étapes consistant à : fournir un substrat (101) ; former une région de source, une région de drain sur le substrat et former un empilement de grille qui est composé d'une couche diélectrique de grille et d'une grille fictive entre la région de source et la région de drain sur le substrat (102) ; éliminer la grille fictive de façon à exposer la couche diélectrique de grille de façon à former une ouverture (103) ; exécuter ensuite une implantation ionique de halo oblique dans le substrat à travers l'ouverture de façon à former des régions à implantation ionique de halo sur les deux côtés de la tranchée du dispositif à semi-conducteur (104) ; recuire de façon à activer les régions à implantation ionique de halo (105) ; exécuter des procédés ultérieurs selon les besoins du procédé de fabrication (106). Le procédé permet de réduire une introduction inappropriée des dopants des régions à implantation ionique de halo dans la région de source et dans la région de drain de façon à réduire le recouvrement entre les régions à implantation ionique de halo et les régions d'impureté de la région de source/de drain et à éviter l'augmentation du courant de fuite de bande à bande dans un dispositif MOSFET et d'améliorer les performances du dispositif.
Also published as
Latest bibliographic data on file with the International Bureau