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1. WO2011066742 - 3D INTEGRATED CIRCUIT STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

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Publication Number WO/2011/066742
Publication Date 09.06.2011
International Application No. PCT/CN2010/074212
International Filing Date 22.06.2010
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
H01L 2225/06513
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2225Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
06503Stacked arrangements of devices
06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
H01L 2225/06541
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2225Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
06503Stacked arrangements of devices
06541Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
H01L 23/481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
481Internal lead connections, e.g. via connections, feedthrough structures
H01L 25/0657
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
0657Stacked arrangements of devices
H01L 25/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
50Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applicants
  • 中国科学院微电子研究所 INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES [CN]/[CN] (AllExceptUS)
  • 朱慧珑 ZHU, Huilong [US]/[US] (UsOnly)
Inventors
  • 朱慧珑 ZHU, Huilong
Agents
  • 北京市立方律师事务所 LIFANG & PARTNERS LAW FIRM
Priority Data
200910242101.904.12.2009CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) 3D INTEGRATED CIRCUIT STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
(FR) STRUCTURE DE CIRCUIT INTEGRE 3D, DISPOSITIF A SEMI-CONDUCTEURS ET PROCEDE DE FORMATION DE LADITE STRUCTURE
(ZH) 3D集成电路结构、半导体器件及其形成方法
front page image
Abstract
(EN)
A semiconductor device is provided, which comprises: a substrate(2), a diffusion stop layer(6) formed on the substrate, an SOI layer(10) formed on the diffusion stop layer, a MOSFET(14) formed on the SOI layer, a silicon via TSV(17) formed through the substrate, the diffusion stop layer, the SOI layer and the MOSFET layer, and an interconnection structure(16) connecting the MOSFET and the silicon via TSV. The performance of the semiconductor device is superior.
(FR)
L'invention concerne un dispositif à semi-conducteurs, qui comprend : un substrat (2), une couche d'arrêt de diffusion (6) formée sur le substrat, une couche SOI (10) formée sur la couche d'arrêt de diffusion, un MOSFET(14) formé sur la couche SOI, un silicium via TSV (17) formé sur le substrat, la couche d'arrêt de diffusion, la couche SOI, la couche MOSFET et une structure d'interconnexion (16) connectant le MOSFET et le silicium via TSV. La performance du dispositif semi-conducteur est plus élevée.
Also published as
CN102088014
US20110227158
Latest bibliographic data on file with the International Bureau
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