Processing

Please wait...

Settings

Settings

1. WO2011065210 - STACKED OXIDE MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

Publication Number WO/2011/065210
Publication Date 03.06.2011
International Application No. PCT/JP2010/069778
International Filing Date 01.11.2010
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H01L 21/20 (2006.01)
H01L 21/336 (2006.01)
H01L 29/786 (2006.01)
CPC
H01L 21/02472
H01L 21/02483
H01L 21/02554
H01L 21/02565
H01L 21/02631
H01L 21/16
Applicants
  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 398, Hase, Atsugi-shi, Kanagawa 2430036, JP (AllExceptUS)
  • YAMAZAKI, Shunpei [JP/JP]; JP (UsOnly)
Inventors
  • YAMAZAKI, Shunpei; JP
Priority Data
2009-27085528.11.2009JP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) STACKED OXIDE MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
(FR) MATÉRIAU D'OXYDE EMPILÉ, DISPOSITIF À SEMI-CONDUCTEURS ET PROCÉDÉ POUR FABRIQUER LE DISPOSITIF À SEMI-CONDUCTEURS
Abstract
(EN)
One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component, forming a second oxide component over the first oxide crystal component; and causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.
(FR)
L'invention, selon un mode de réalisation, porte sur un procédé pour fabriquer un matériau d'oxyde empilé, ledit procédé comprenant les étapes de formation d'un premier composant d'oxyde sur un composant de base, de croissance de cristal qui part à partir d'une surface vers l'intérieur du premier composant d'oxyde par un premier traitement thermique afin de former un premier composant de cristal d'oxyde au moins partiellement en contact avec le composant de base, de formation d'un deuxième composant d'oxyde sur le premier composant de cristal d'oxyde ; et de croissance d'un cristal par un deuxième traitement thermique en utilisant le premier composant de cristal d'oxyde comme germe afin de former un deuxième composant de cristal d'oxyde.
Latest bibliographic data on file with the International Bureau