Feedback
Settings

Settings

Goto Application

1. WO2011065207 - RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

PermaLink
Publication Number WO/2011/065207
Publication Date 03.06.2011
International Application No. PCT/JP2010/069732
International Filing Date 05.11.2010
IPC
G03F 7/40 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/0035
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
0035Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
G03F 7/0046
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0046with perfluoro compounds, e.g. for dry lithography
G03F 7/0397
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0397the macromolecular compound having an alicyclic moiety in a side chain
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/2041
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2041in the presence of a fluid, e.g. immersion; using fluid cooling means
G03F 7/40
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
Applicants
  • ＪＳＲ株式会社 JSR CORPORATION [JP]/[JP] (AllExceptUS)
  • 庵野　祐亮 ANNO, Yusuke [JP]/[JP] (UsOnly)
  • 若松　剛史 WAKAMATSU, Goji [JP]/[JP] (UsOnly)
Inventors
  • 庵野　祐亮 ANNO, Yusuke
  • 若松　剛史 WAKAMATSU, Goji
Agents
  • 渡邉　一平 WATANABE, Kazuhira
Priority Data
2009-27168230.11.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
(FR) COMPOSITION SENSIBLE AUX RAYONNEMENTS ET PROCÉDÉS DE FORMATION D'UN MOTIF DE PHOTORÉSINE
(JA) 感放射線性組成物及びレジストパターン形成方法
front page image
Abstract
(EN)
Disclosed is a radiation-sensitive composition that is used in step 1 of a method for forming a resist pattern that contains: (1) a step for forming a first resist pattern on a substrate using a first radiation-sensitive composition; (2) a step for insolubilizing the first resist pattern with respect to a second radiation-sensitive composition; and (3) a step for using the second radiation-sensitive composition to form a second resist pattern on the substrate whereupon the first resist pattern had been formed. The radiation-sensitive composition contains: (A) a polymer containing a repeating unit that has an acid labile group; (B) a polymer containing a repeating unit that has a fluorine atom, and a repeating unit that has a crosslinking group; (C) a radiation-sensitive acid generator; and (D) a solvent.
(FR)
La présente invention concerne une composition sensible aux rayonnements qui est utilisée dans l'étape 1 d'un procédé permettant de former un motif de photorésine. Ledit procédé comprend : (1) une étape permettant de former un premier motif de photorésine sur un substrat à l'aide d'une première composition sensible aux rayonnements ; (2) une étape permettant d'insolubiliser le premier motif de photorésine par rapport à une seconde composition sensible aux rayonnements ; et (3) une étape permettant d'utiliser la seconde composition sensible aux rayonnements afin de former un second motif de photorésine sur le substrat sur lequel le premier motif de photorésine a été formé. La composition sensible aux rayonnements contient : (A) un polymère contenant un motif récurrent qui comporte un groupe labile acide ; (B) un polymère contenant un motif récurrent qui comporte un atome de fluor et un motif récurrent qui comporte un groupe de réticulation ; (C) un générateur d'acide sensible aux rayonnements ; et (D) un solvant.
(JA)
　第一の感放射線性組成物を用いて、基板上に第一のレジストパターンを形成する工程（１）と、第一のレジストパターンを、第二の感放射線性組成物に対して不溶化させる工程（２）と、第二の感放射線性組成物を用いて、第一のレジストパターンが形成された基板上に第二のレジストパターンを形成する工程（３）と、を含むレジストパターン形成方法の工程（１）で用いられる、（Ａ）酸不安定基を有する繰り返し単位を含む重合体と、（Ｂ）架橋基を有する繰り返し単位、及びフッ素原子を有する繰り返し単位を含む重合体と、（Ｃ）感放射線性酸発生剤と、（Ｄ）溶剤と、を含有する感放射線性組成物である。
Also published as
JPWO2011065207
Latest bibliographic data on file with the International Bureau
# -