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Machine translation
1. (WO2011064085) SELF ALIGNED CARBIDE SOURCE/DRAIN FET
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/064085    International Application No.:    PCT/EP2010/066989
Publication Date: 03.06.2011 International Filing Date: 08.11.2010
IPC:
H01L 29/775 (2006.01), H01L 29/16 (2006.01), H01L 51/05 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504 (US) (For All Designated States Except US).
CHANG, Josephine [US/US]; (US) (For US Only).
GUILLORN, Michael [US/US]; (US) (For US Only).
LAVOIE, Christian [CA/US]; (US) (For US Only).
CABRAL, Cyril, Jr. [US/US]; (US) (For US Only).
GRILL, Alfred [US/US]; (US) (For US Only).
O'SULLIVAN, Eugene [IE/US]; (US) (For US Only)
Inventors: CHANG, Josephine; (US).
GUILLORN, Michael; (US).
LAVOIE, Christian; (US).
CABRAL, Cyril, Jr.; (US).
GRILL, Alfred; (US).
O'SULLIVAN, Eugene; (US)
Agent: ROBERTS, Scott; IBM United Kingdom Limited Intellectual Property Law Hursley Park Winchester Hampshire SO21 2JN (GB)
Priority Data:
12/627,120 30.11.2009 US
Title (EN) SELF ALIGNED CARBIDE SOURCE/DRAIN FET
(FR) TRANSISTOR À EFFET DE CHAMP AUTO-ALIGNÉ, AVEC SOURCE/DRAIN EN CARBURE
Abstract: front page image
(EN)A field effect transistor includes a metal carbide source portion, a metal carbide drain portion, an insulating carbon portion separating the metal carbide source portion from the metal carbide drain portion, a nanostructure formed over the insulating carbon portion and connecting the metal carbide source portion to the metal carbide drain portion, and a gate stack formed over at least a portion of the insulating carbon portion and at least a portion of the nanostructure.
(FR)L'invention concerne un transistor à effet de champ comprenant une partie de source en carbure métallique, une partie de drain en carbure métallique, une partie de carbone isolante séparant la partie de source en carbure métallique de la partie de drain en carbure métallique, une nanostructure formée sur la partie de carbone isolante et connectant la partie de source en carbure métallique et la partie de drain en carbure métallique, et un empilement de grille formé au-dessus d'au moins une partie de la partie de carbone isolante et d'au moins une partie de la nanostructure.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)