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1. WO2011054968 - EPITAXIAL GRAPHENE ON SIC, HAVING AN OPEN GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD ZERO-GAP GRAPHENE

Publication Number WO/2011/054968
Publication Date 12.05.2011
International Application No. PCT/EP2010/067134
International Filing Date 09.11.2010
Chapter 2 Demand Filed 22.08.2011
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
CPC
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
H01L 21/02378
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02378Silicon carbide
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/02433
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
02433Crystal orientation
H01L 21/02447
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02441Group 14 semiconducting materials
02447Silicon carbide
H01L 21/02516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02516Crystal orientation
Applicants
  • COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES [FR]/[FR] (AllExceptUS)
  • CHIANG, Shirley [US]/[US] (UsOnly)
  • ENRIQUEZ, Hanna [FR]/[FR] (UsOnly)
  • OUGHADDOU, Hamid [FR]/[FR] (UsOnly)
  • SOUKIASSIAN, Patrick [FR]/[FR] (UsOnly)
  • TEJEDA GALA, Antonio [FR]/[FR] (UsOnly)
  • VIZZINI, Sébastien [FR]/[FR] (UsOnly)
Inventors
  • CHIANG, Shirley
  • ENRIQUEZ, Hanna
  • OUGHADDOU, Hamid
  • SOUKIASSIAN, Patrick
  • TEJEDA GALA, Antonio
  • VIZZINI, Sébastien
Agents
  • ILGART, Jean-Christophe
Priority Data
09 5791709.11.2009FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) EPITAXIAL GRAPHENE ON SIC, HAVING AN OPEN GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD ZERO-GAP GRAPHENE
(FR) GRAPHENE EPITAXIE SUR SIC, AYANT UN GAP OUVERT ET UNE MOBILITE COMPARABLE A CELLE DU GRAPHENE STANDARD A GAP NUL
Abstract
(EN)
The invention relates to a method for manufacturing a modified structure (801) comprising a layer of semiconductor modified graphene (83) on a substrate (82), including the following consecutive steps: providing an initial structure (800) comprising at least one substrate (81), forming a graphene layer (82) on the substrate, and hydrogenating the initial structure (800) by means of exposing said structure to atomic hydrogen (85), and characterized in that the step of hydrogenating the graphene layer is carried out with a exposure dose of between 100 and 4,000 Langmuirs, and forms a modified graphene layer.
(FR)
L' invention concerne un procédé de fabrication d'une structure modifiée (801) comportant une couche de graphène modifié (83), semiconducteur, sur un substrat (82), comprenant les étapes successives suivantes : - fourniture d'une structure initiale (800) comportant au moins un substrat (81), - formation d'une couche de graphène (82) sur le substrat, - hydrogénation de la structure initiale (800) par exposition à de l'hydrogène atomique (85), caractérisé en ce que l'étape d'hydrogénation de la couche de graphène est réalisée avec une dose d'exposition comprise entre 100 et 4000 Langmuirs, et forme une couche de graphène modifié
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