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1. (WO2011054968) EPITAXIAL GRAPHENE ON SIC, HAVING AN OPEN GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD ZERO-GAP GRAPHENE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2011/054968 International Application No.: PCT/EP2010/067134
Publication Date: 12.05.2011 International Filing Date: 09.11.2010
Chapter 2 Demand Filed: 22.08.2011
IPC:
H01L 21/02 (2006.01) ,H01L 21/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
CHIANG, Shirley [US/US]; US (UsOnly)
ENRIQUEZ, Hanna [FR/FR]; FR (UsOnly)
OUGHADDOU, Hamid [FR/FR]; FR (UsOnly)
SOUKIASSIAN, Patrick [FR/FR]; FR (UsOnly)
TEJEDA GALA, Antonio [FR/FR]; FR (UsOnly)
VIZZINI, Sébastien [FR/FR]; FR (UsOnly)
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES [FR/FR]; 25 rue Leblanc Bâtiment "Le Ponant D" F-75015 Paris, FR (AllExceptUS)
Inventors:
CHIANG, Shirley; US
ENRIQUEZ, Hanna; FR
OUGHADDOU, Hamid; FR
SOUKIASSIAN, Patrick; FR
TEJEDA GALA, Antonio; FR
VIZZINI, Sébastien; FR
Agent:
ILGART, Jean-Christophe; Brevalex 95, rue d'Amsterdam F-75378 Paris Cedex 8, FR
Priority Data:
09 5791709.11.2009FR
Title (EN) EPITAXIAL GRAPHENE ON SIC, HAVING AN OPEN GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD ZERO-GAP GRAPHENE
(FR) GRAPHENE EPITAXIE SUR SIC, AYANT UN GAP OUVERT ET UNE MOBILITE COMPARABLE A CELLE DU GRAPHENE STANDARD A GAP NUL
Abstract:
(EN) The invention relates to a method for manufacturing a modified structure (801) comprising a layer of semiconductor modified graphene (83) on a substrate (82), including the following consecutive steps: providing an initial structure (800) comprising at least one substrate (81), forming a graphene layer (82) on the substrate, and hydrogenating the initial structure (800) by means of exposing said structure to atomic hydrogen (85), and characterized in that the step of hydrogenating the graphene layer is carried out with a exposure dose of between 100 and 4,000 Langmuirs, and forms a modified graphene layer.
(FR) L' invention concerne un procédé de fabrication d'une structure modifiée (801) comportant une couche de graphène modifié (83), semiconducteur, sur un substrat (82), comprenant les étapes successives suivantes : - fourniture d'une structure initiale (800) comportant au moins un substrat (81), - formation d'une couche de graphène (82) sur le substrat, - hydrogénation de la structure initiale (800) par exposition à de l'hydrogène atomique (85), caractérisé en ce que l'étape d'hydrogénation de la couche de graphène est réalisée avec une dose d'exposition comprise entre 100 et 4000 Langmuirs, et forme une couche de graphène modifié
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)