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1. (WO2011054968) EPITAXIAL GRAPHENE ON SIC, HAVING AN OPEN GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD ZERO-GAP GRAPHENE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/054968    International Application No.:    PCT/EP2010/067134
Publication Date: 12.05.2011 International Filing Date: 09.11.2010
Chapter 2 Demand Filed:    22.08.2011    
IPC:
H01L 21/02 (2006.01), H01L 21/20 (2006.01)
Applicants: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES [FR/FR]; 25 rue Leblanc Bâtiment "Le Ponant D" F-75015 Paris (FR) (For All Designated States Except US).
CHIANG, Shirley [US/US]; (US) (For US Only).
ENRIQUEZ, Hanna [FR/FR]; (FR) (For US Only).
OUGHADDOU, Hamid [FR/FR]; (FR) (For US Only).
SOUKIASSIAN, Patrick [FR/FR]; (FR) (For US Only).
TEJEDA GALA, Antonio [FR/FR]; (FR) (For US Only).
VIZZINI, Sébastien [FR/FR]; (FR) (For US Only)
Inventors: CHIANG, Shirley; (US).
ENRIQUEZ, Hanna; (FR).
OUGHADDOU, Hamid; (FR).
SOUKIASSIAN, Patrick; (FR).
TEJEDA GALA, Antonio; (FR).
VIZZINI, Sébastien; (FR)
Agent: ILGART, Jean-Christophe; Brevalex 95, rue d'Amsterdam F-75378 Paris Cedex 8 (FR)
Priority Data:
09 57917 09.11.2009 FR
Title (EN) EPITAXIAL GRAPHENE ON SIC, HAVING AN OPEN GAP AND MOBILITY COMPARABLE TO THAT OF STANDARD ZERO-GAP GRAPHENE
(FR) GRAPHENE EPITAXIE SUR SIC, AYANT UN GAP OUVERT ET UNE MOBILITE COMPARABLE A CELLE DU GRAPHENE STANDARD A GAP NUL
Abstract: front page image
(EN)The invention relates to a method for manufacturing a modified structure (801) comprising a layer of semiconductor modified graphene (83) on a substrate (82), including the following consecutive steps: providing an initial structure (800) comprising at least one substrate (81), forming a graphene layer (82) on the substrate, and hydrogenating the initial structure (800) by means of exposing said structure to atomic hydrogen (85), and characterized in that the step of hydrogenating the graphene layer is carried out with a exposure dose of between 100 and 4,000 Langmuirs, and forms a modified graphene layer.
(FR)L' invention concerne un procédé de fabrication d'une structure modifiée (801) comportant une couche de graphène modifié (83), semiconducteur, sur un substrat (82), comprenant les étapes successives suivantes : - fourniture d'une structure initiale (800) comportant au moins un substrat (81), - formation d'une couche de graphène (82) sur le substrat, - hydrogénation de la structure initiale (800) par exposition à de l'hydrogène atomique (85), caractérisé en ce que l'étape d'hydrogénation de la couche de graphène est réalisée avec une dose d'exposition comprise entre 100 et 4000 Langmuirs, et forme une couche de graphène modifié
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)