Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2011037757) METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2011/037757 International Application No.: PCT/US2010/048269
Publication Date: 31.03.2011 International Filing Date: 09.09.2010
IPC:
H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US (AllExceptUS)
NANGOY, Roy, C. [US/US]; US (UsOnly)
SINGH, Saravjeet [US/US]; US (UsOnly)
FARR, Jon, C. [US/US]; US (UsOnly)
PAMARTHY, Sharma, V. [US/US]; US (UsOnly)
KUMAR, Ajay [US/US]; US (UsOnly)
Inventors:
NANGOY, Roy, C.; US
SINGH, Saravjeet; US
FARR, Jon, C.; US
PAMARTHY, Sharma, V.; US
KUMAR, Ajay; US
Agent:
PATTERSON, B., Todd; Patterson & Sheridan, L.L.P. 3040 Post Oak Blvd., Suite 1500 Houston, Texas 77056-6582, US
Priority Data:
61/245,86925.09.2009US
Title (EN) METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR
(FR) PROCÉDÉ ET APPAREIL POUR DISSOCIATION DE GAZ TRÈS ÉLEVÉE DANS UN RÉACTEUR À PLASMA À COUPLAGE INDUCTIF
Abstract:
(EN) Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
(FR) Des modes de réalisation de la présente invention se rapportent à un procédé et à un appareil destinés à fournir des gaz de traitement à une chambre de traitement à efficacité de dissociation de gaz améliorée. Un mode de réalisation de la présente invention se rapporte à un ensemble buse de déflecteur comprenant un corps extérieur délimitant un volume d'extension relié à une chambre de traitement. Un gaz de traitement s'écoule jusque dans la chambre de traitement à travers le volume d'extension qui est exposé à une source d'alimentation pour génération de plasma.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2013506292CN102763198KR1020120073292