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1. WO2011032218 - METHOD FOR TEXTURING SURFACES

Publication Number WO/2011/032218
Publication Date 24.03.2011
International Application No. PCT/AU2010/001208
International Filing Date 16.09.2010
IPC
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
C03C 15/00
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
15Surface treatment of glass, not in the form of fibres or filaments, by etching
C09K 13/08
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
08containing a fluorine compound
H01L 31/02366
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02366of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
Applicants
  • NEWSOUTH INNOVATIONS PTY LIMITED [AU]/[AU] (AllExceptUS)
  • BRAZIL, Ian [AU]/[AU] (UsOnly)
  • LENNON, Alison Joan [AU]/[AU] (UsOnly)
Inventors
  • BRAZIL, Ian
  • LENNON, Alison Joan
Agents
  • F B RICE & CO
Priority Data
200990453718.09.2009AU
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR TEXTURING SURFACES
(FR) MÉTHODE DE TEXTURATION DE SURFACES
Abstract
(EN)
A method of texturing a surface of a selected material is provided. The method includes: a. applying a base etching component as a layer extending over the surface of the selected material; b. depositing a fluid etching component in a pattern of discrete deposition points over a predetermined area of the surface to be textured, such that the deposited fluid etching component spreads laterally after being deposited. The base etching component and the deposited fluid etching component combine to form an etching composition to etch the surface of the selected material in the areas where the deposited fluid etching component is deposited and spreads. This results in an etched pattern of texture on the surface of the selected material, which is a 2 dimensional spatial modulation of the pattern of discrete deposition points.
(FR)
L'invention porte sur une méthode de texturation de surfaces d'un matériau sélectionné consistant: a) à appliquer un composant de mordançage en tant que couche revêtant la surface du matériau sélectionné; b) à déposer un composant de mordançage fluide en un motif de points discrets de dépôt sur une zone prédéterminée de la surface à texturer de manière à ce que le composant de mordançage fluide déposé s'étale latéralement après avoir été déposé. Le composant de mordançage de base et le composant de mordançage fluide déposé se combinent pour former une composition de mordançage attaquant la surface du matériau sélectionné dans les zones où le composant de mordançage fluide déposé s'est étalé. Il en résulte un motif texturé qui est la modulation spatiale en 2D dudit motif de points discrets de dépôt.
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