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1. WO2011031586 - A FIN-FET NON-VOLATILE MEMORY CELL, AND AN ARRAY AND METHOD OF MANUFACTURING

Publication Number WO/2011/031586
Publication Date 17.03.2011
International Application No. PCT/US2010/047276
International Filing Date 31.08.2010
IPC
H01L 29/76 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
H01L 27/108 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
CPC
H01L 27/11521
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11521characterised by the memory core region
H01L 29/40114
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
401Multistep manufacturing processes
4011for data storage electrodes
40114the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
H01L 29/66825
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66825with a floating gate
H01L 29/7851
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
7851with the body tied to the substrate
H01L 29/7881
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
7881Programmable transistors with only two possible levels of programmation
Applicants
  • SILICON STORAGE TECHNOLOGY, INC. [US]/[US] (AllExceptUS)
  • HU, Yaw, Wen [US]/[US] (UsOnly)
  • TUNTASOOD, Prateep [US]/[US] (UsOnly)
Inventors
  • HU, Yaw, Wen
  • TUNTASOOD, Prateep
Agents
  • YIN, Ronald, L.
Priority Data
12/555,75608.09.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A FIN-FET NON-VOLATILE MEMORY CELL, AND AN ARRAY AND METHOD OF MANUFACTURING
(FR) CELLULE DE MÉMOIRE NON VOLATILE À FIN-FET, MATRICE ET PROCÉDÉ DE FABRICATION
Abstract
(EN)
A non-volatile memory cell has a substrate layer with a fin shaped semiconductor member of a first conductivity type on the substrate layer The fin shaped member has a first region of a second conductivity type and a second region of the second conductivity type, spaced apart from the first region with a channel region extending between the first region and the second region The fin shaped member has a top surface and two side surfaces between the first region and the second region A word line is adjacent to the first region and is capacitively coupled to the top surface and the two side surfaces of a first portion of the channel region A floating gate is adjacent to the word line and is insulated from the top surface and is capcitively coupled to the two side surfaces of a second portion o the channel region.
(FR)
L'invention concerne une cellule de mémoire non volatile comportant une couche de substrat surmontée d'un élément semiconducteur en forme d'ailette d'un premier type de conductivité. L'élément en forme d'ailette présente une première région d'un deuxième type de conductivité et une deuxième région du deuxième type de conductivité, espacée par rapport à la première région, une région de canal s'étendant entre la première région et la deuxième région. L'élément en forme d'ailette présente une surface supérieure et deux surfaces latérales situées entre la première région et la deuxième région. Une ligne de mots est adjacente à la première région et est couplée de façon capacitive à la surface supérieure et aux deux surfaces latérales d'une première partie de la région de canal. Une grille flottante se trouve adjacente à la ligne de mots et est isolée de la surface supérieure et couplée de façon capacitive aux deux surfaces latérales d'une deuxième partie de la région de canal.
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