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1. WO2011028037 - ETCHANT FOR THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY

Publication Number WO/2011/028037
Publication Date 10.03.2011
International Application No. PCT/KR2010/005960
International Filing Date 02.09.2010
IPC
C09K 13/08 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
08containing a fluorine compound
CPC
C23F 1/14
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
14Aqueous compositions
C23F 1/44
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
44Compositions for etching metallic material from a metallic material substrate of different composition
H01L 21/32134
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32134by liquid etching only
H01L 29/458
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
45Ohmic electrodes
456on silicon
458for thin film silicon, e.g. source or drain electrode
H01L 29/4908
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4908for thin film semiconductor, e.g. gate of TFT
Applicants
  • TECHNO SEMICHEM CO., LTD. [KR]/[KR] (AllExceptUS)
  • SONG, Yong Sung [KR]/[KR] (UsOnly)
  • RHEE, Tai Hyung [KR]/[KR] (UsOnly)
Inventors
  • SONG, Yong Sung
  • RHEE, Tai Hyung
Agents
  • KWON, Oh-Sig
Priority Data
10-2009-008377007.09.2009KR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ETCHANT FOR THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY
(FR) AGENT DE GRAVURE POUR UN AFFICHAGE À CRISTAUX LIQUIDES À TRANSISTORS À COUCHES MINCES
Abstract
(EN)
Provided is an etchant of a metal film including an organic chelating agent with an amino group and a carboxyl group; peroxides; oxidants fluorine compounds; glycols; additives and deionized water. Provided is a composition of an etchant for patterning of a copper film which is a wiring material of a gate electrode and source/drain forming a Thin Film Transistor-Liquid Crystal Display (TFT-LCD). The etchant generates uniform etching and has excellent stability, so it improvesnon-uniform etching generated by high viscosity, which is a disadvantage of the phosphorous etchant, as well as stability of the peroxide etchant. The etchant has a uniform etching property by solving a spot problem due to high viscosity of a high composition of the phosphorous etchant. Bulk etching of a single layer as well as a multi-layer is possible.
(FR)
La présente invention se rapporte à un agent de gravure d'un film métallique comprenant un agent chélatant organique avec un groupe amino et un groupe carboxyle ; des peroxydes ; des composés de fluor oxydants ; des glycols ; des additifs et de l'eau déminéralisée. La présente invention se rapporte également à une composition d'un agent de gravure permettant la formation d'un motif d'un film de cuivre qui est un matériau de câblage d'une électrode grille ou d'une source/d'un drain formant un affichage à cristaux liquides à transistors à couches minces (TFT-LCD). L'agent de gravure génère une gravure uniforme et présente une excellente stabilité de sorte qu'il améliore l'effet de gravure non uniforme générée par une viscosité élevée, ce qui est un inconvénient de l'agent de gravure au phosphore, ainsi qu'une stabilité de l'agent de gravure au peroxyde. L'agent de gravure présente une propriété de gravure uniforme en résolvant le problème de tache dû à une viscosité élevée d'une composition importante de l'agent de gravure au phosphore. Une gravure en volume d'une seule couche ainsi que de multiples couches est possible.
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