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1. (WO2011027515) METHOD FOR ETCHING SILICON-CONTAINING FILM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2011/027515 International Application No.: PCT/JP2010/005234
Publication Date: 10.03.2011 International Filing Date: 25.08.2010
IPC:
H01L 21/3065 (2006.01) ,H05H 1/24 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
Applicants:
積水化学工業株式会社 SEKISUI CHEMICAL CO., LTD. [JP/JP]; 大阪府大阪市北区西天満2丁目4番4号 4-4, Nishitemma 2-chome, Kita-ku, Osaka-shi, Osaka 5308565, JP (AllExceptUS)
功刀 俊介 KUNUGI, Shunsuke [JP/JP]; JP (UsOnly)
真弓 聡 MAYUMI, Satoshi [JP/JP]; JP (UsOnly)
佐藤 崇 SATOH, Takashi [JP/JP]; JP (UsOnly)
Inventors:
功刀 俊介 KUNUGI, Shunsuke; JP
真弓 聡 MAYUMI, Satoshi; JP
佐藤 崇 SATOH, Takashi; JP
Agent:
渡辺 昇 WATANABE, Noboru; 東京都千代田区九段南3丁目7番7号、九段南グリーンビル3階 Kudanminami Green Bldg. 3F., 7-7, Kudanminami 3-chome, Chiyoda-ku, Tokyo 1020074, JP
Priority Data:
2009-20300002.09.2009JP
Title (EN) METHOD FOR ETCHING SILICON-CONTAINING FILM
(FR) PROCÉDÉ POUR GRAVER UN FILM CONTENANT DU SILICIUM
(JA) シリコン含有膜のエッチング方法
Abstract:
(EN) Disclosed is a method for etching a silicon-containing film, wherein lifting or separation of an organic film is prevented. Specifically, an etching material gas that does not substantially contain hydrogen atoms is introduced into a plasma space (23) that is at near atmospheric pressure, thereby producing an etching gas. The etching gas is brought into contact with an object to be processed (90) that contains a silicon-containing film (92) and an organic film (93). The silicon-containing film (92) can be oxidized with nitrogen oxide (NOx). The etching material gas contains 7-80% by volume of a fluorine-based material that does not contain hydrogen atoms, 7-80% by volume of nitrogen (N2) and 5-60% by volume of oxygen (O2).
(FR) L'invention porte sur un procédé pour graver un film contenant du silicium, en empêchant un soulèvement ou une séparation d'un film organique. De façon plus spécifique, un gaz décapant, qui ne contient pour ainsi dire pas d'atomes d'hydrogène, est introduit dans un espace de plasma (23) qui se trouve sous une pression proche de la pression atmosphérique, permettant ainsi de produire un gaz de gravure. Le gaz de gravure est mis en contact avec un objet à traiter (90) qui contient un film (92) contenant du silicium et un film organique (93). Le film (92) contenant du silicium peut être oxydé par de l'oxyde d'azote (NOx). Le gaz décapant contient 7 à 80% en volume d'un matériau fluoré qui ne contient pas d'atomes d'hydrogène, 7 à 80% en volume d'azote (N2) et 5 à 60% en volume d'oxygène (O2).
(JA)  有機膜の浮きや剥がれを防止しながら、シリコン含有膜をエッチングする。 水素原子を実質的に含有しないエッチング原料ガスを大気圧近傍のプラズマ空間23に導入してエッチングガスを生成する。シリコン含有膜92及び有機膜93を含む被処理物90にエッチングガスを接触させる。シリコン含有膜92は、酸化窒素(NOx)にて酸化可能である。エッチング原料ガスは、水素原子を含有しないフッ素系原料を7~80体積%、窒素(N)を7~80体積%、酸素(O)を5~60体積%含有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2011027515CN102498550KR1020120058595