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1. WO2011024953 - N-ACYL-Β-LACTAM DERIVATIVE, MACROMOLECULAR COMPOUND, AND PHOTORESIST COMPOSITION

Publication Number WO/2011/024953
Publication Date 03.03.2011
International Application No. PCT/JP2010/064604
International Filing Date 27.08.2010
IPC
C08F 20/34 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
34Esters containing nitrogen
C08F 20/52 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
52Amides or imides
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
C07D 205/08
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
DHETEROCYCLIC COMPOUNDS
205Heterocyclic compounds containing four-membered rings with one nitrogen atom as the only ring hetero atom
02not condensed with other rings
06having one double bond between ring members or between a ring member and a non-ring member
08with one oxygen atom directly attached in position 2, e.g. beta-lactams
C08F 20/26
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
10Esters
26Esters containing oxygen in addition to the carboxy oxygen
C08F 20/34
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
10Esters
34Esters containing nitrogen ; , e.g. N,N-dimethylaminoethyl (meth)acrylate
C08F 226/06
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
226Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
06by a heterocyclic ring containing nitrogen
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/0397
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0397the macromolecular compound having an alicyclic moiety in a side chain
Applicants
  • 株式会社クラレ KURARAY CO., LTD. [JP]/[JP] (AllExceptUS)
  • 福本 隆司 FUKUMOTO, Takashi [JP]/[JP] (UsOnly)
  • 松永 修始 MATSUNAGA, Shuji [JP]/[JP] (UsOnly)
  • ▲鶴▼田 美樹 TSURUTA, Miki [JP]/[JP] (UsOnly)
Inventors
  • 福本 隆司 FUKUMOTO, Takashi
  • 松永 修始 MATSUNAGA, Shuji
  • ▲鶴▼田 美樹 TSURUTA, Miki
Agents
  • 大谷 保 OHTANI, Tamotsu
Priority Data
2009-19902628.08.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) N-ACYL-Β-LACTAM DERIVATIVE, MACROMOLECULAR COMPOUND, AND PHOTORESIST COMPOSITION
(FR) DÉRIVÉ DE N-ACYL-Β-LACTAME, COMPOSÉ MACROMOLÉCULAIRE ET COMPOSITION DE PHOTORÉSIST
(JA) N-アシル-β-ラクタム誘導体、高分子化合物およびフォトレジスト組成物
Abstract
(EN)
Disclosed are an N-acyl-β-lactam derivative that is represented by the general formula below and by which a photoresist composition that shortens the length of acid diffusion can be obtained, a macromolecular compound that is obtained by polymerizing the N-acyl-β-lactam derivative represented by said general formula below as one starting material, and a photoresist composition that comprises said macromolecular compound. (R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. W represents an alkylene group or a cycloalkylene group. n represents 0 or 1. R2, R3, R4, and R5 each independently represent a hydrogen atom, an alkyl group, a cyclic hydrocarbon group, or an acyloxy group. However, 1) R2 and R3, and R4 and R5 may together form either a substituted or unsubstituted ring that may have oxygen atoms in arbitrary positions, 2) R3 and R4 may together form a either a substituted or unsubstituted ring that may have oxygen atoms in arbitrary positions, and 3) R2, R3, R4, and R5 are not all simultaneously a hydrogen atom.
(FR)
L'invention porte sur un dérivé de N-acyl-β-lactame qui est représenté par la formule générale ci-dessous et par lequel une composition de photorésist qui raccourcit l'étendue de diffusion d'acide peut être obtenue, sur un composé macromoléculaire qui est obtenu par polymérisation du dérivé de N-acyl-β-lactame représenté par ladite formule générale ci-dessous comme matière de départ, et sur une composition de photorésist qui comprend ledit composé macromoléculaire. R1 représente un atome d'hydrogène, un groupe méthyle ou un groupe trifluorométhyle. W représente un groupe alkylène ou un groupe cycloalkylène. n représente 0 ou 1. R2, R3, R4 et R5 représentent chacun indépendamment un atome d'hydrogène, un groupe alkyle, un groupe hydrocarboné cyclique ou un groupe acyloxy. Cependant, 1) R2 et R3, et R4 et R5, peuvent former ensemble un noyau soit substitué soit non substitué qui peut avoir des atomes d'oxygène dans des positions arbitraires, 2) R3 et R4 peuvent former ensemble un noyau soit substitué soit non substitué qui peut avoir des atomes d'oxygène dans des positions arbitraires, et 3) R2, R3, R4 et R5 ne représentent pas tous simultanément un atome d'hydrogène.
(JA)
 酸拡散長を短く制御するフォトレジスト組成物が得られる下記一般式で示されるN-アシル-β-ラクタム誘導体、該下記一般式で示されるN-アシル-β-ラクタム誘導体を原料の1つとして重合することにより得られる高分子化合物、および該高分子化合物を含有するフォトレジスト組成物を提供する。 (式中、R1は、水素原子、メチル基、またはトリフルオロメチル基を表す。Wは、アルキレン基またはシクロアルキレン基を表す。nは、0または1を表す。R2、R3、R4およびR5は、それぞれ独立して、水素原子、アルキル基、環状炭化水素基またはアシルオキシ基を表す。但し、1)R2とR3、R4とR5は、連結して、任意の位置に酸素原子を有していてもよい置換もしくは無置換の環を形成してもよく、2)R3とR4は、連結して、任意の位置に酸素原子を有していてもよい置換もしくは無置換の環を形成してもよく、また、3)R2、R3、R4およびR5の全てが同時に水素原子であることはない。)
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