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1. WO2011024561 - POWER GENERATING APPARATUS AND POWER GENERATING SYSTEM PROVIDED WITH THE POWER GENERATING APPARATUS

Publication Number WO/2011/024561
Publication Date 03.03.2011
International Application No. PCT/JP2010/061413
International Filing Date 05.07.2010
IPC
H02N 6/00 2006.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
6Generators in which light radiation is directly converted into electrical energy
H01L 31/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
042PV modules or arrays of single PV cells
H01L 35/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
H02N 11/00 2006.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
11Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
CPC
H01L 31/02021
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
02016Circuit arrangements of general character for the devices
02019for devices characterised by at least one potential jump barrier or surface barrier
02021for solar cells
H01L 31/042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
H01L 31/05
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 35/28
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
H02S 10/10
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
10PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
10including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
H02S 40/44
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
40Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
40Thermal components
44Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
Applicants
  • 富士通株式会社 FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • 鈴木 貴志 SUZUKI Takashi [JP]/[JP] (UsOnly)
Inventors
  • 鈴木 貴志 SUZUKI Takashi
Agents
  • 青木 篤 AOKI Atsushi
Priority Data
2009-19540426.08.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POWER GENERATING APPARATUS AND POWER GENERATING SYSTEM PROVIDED WITH THE POWER GENERATING APPARATUS
(FR) APPAREIL DE GÉNÉRATION D'ÉLECTRICITÉ ET SYSTÈME DE GÉNÉRATION D'ÉLECTRICITÉ DOTÉ DE L'APPAREIL DE GÉNÉRATION D'ÉLECTRICITÉ
(JA) 発電装置及びそのような発電装置を備えた発電システム
Abstract
(EN)
Disclosed is a power generating apparatus which is provided with: a plurality of pn multilayer bodies (11), each of which has a p-type semiconductor layer (11a) and an n-type semiconductor layer (11b) stacked therein; and a mode switching section (16), which connects together the pn multilayer bodies (11), and switches mode between optical power generation mode and thermal power generation mode. The mode switching section (16) switches the mode to the optical power generation mode by connecting in parallel the p-type semiconductor layers (11a) of the pn multilayer bodies (11) and by connecting in parallel the n-type semiconductor layers (11b) of the pn multilayer bodies. Furthermore, the mode switching section (16) switches the mode to the thermal power generation mode by connecting in series each p-type semiconductor layer (11a) and each n-type semiconductor layer (11b) of different pn multilayer bodies (11).
(FR)
L'invention concerne un appareil de génération d'électricité comprenant : une pluralité de corps à couches multiples pn (11), chacun incluant une couche semi-conductrice de type p (11a) et une couche semi-conductrice de type n (11b) qui y sont empilées et une section de commutation de mode (16) connectant les uns aux autres les corps à couches multiples pn (11) et commutant le mode entre le mode de génération photovoltaïque et le mode de génération thermique. La section de commutation de mode (16) bascule le mode en mode de génération photovoltaïque en connectant en parallèle les couches semi-conductrices de type p (11a) des corps à couches multiples pn (11) et en connectant en parallèle les couches semi-conductrices de type n (11b) des corps à couches multiples pn. Par ailleurs, la section de commutation de mode (16) commute le mode en mode de génération thermique en connectant en série chaque couche semi-conductrice de type p (11a) et chaque couche semi-conductrice de type n (11b) des différents corps à couches multiples pn (11).
(JA)
 本発明に係る発電装置の一形態は、p型半導体層11aとn型半導体層11bとが積層された複数のpn積層体11と、複数のpn積層体11同士を接続して、光発電モード又は熱発電モードに切り替えるモード切り替え部16と、を備える。モード切り替え部16は、複数のpn積層体11に対して、p型半導体層同11a士を並列に接続し且つn型半導体層11b同士を並列に接続することにより、光発電モードに切り替える。また、モード切り替え部16は、異なるpn積層体11に対して、p型半導体層11aとn型半導体層11bとを直列に接続することにより、熱発電モードに切り替える。
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