WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2011021774) OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/021774    International Application No.:    PCT/KR2010/004543
Publication Date: 24.02.2011 International Filing Date: 13.07.2010
IPC:
H01L 33/20 (2010.01)
Applicants: YOUN, Kang-Sik [KR/KR]; (KR)
Inventors: YOUN, Kang-Sik; (KR)
Agent: PHIL & ONZI INT'L PATENT & LAW FIRM; 8F, Jinsuk B/D. 1536-7, Seocho-dong, Seocho-gu Seoul 137-872 (KR)
Priority Data:
10-2009-0077269 20.08.2009 KR
Title (EN) OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF OPTIQUE À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(KO) 반도체 광소자 및 그 제조방법
Abstract: front page image
(EN)The present invention relates to an optical semiconductor device comprising: a first semiconductor layer formed on a baseboard; a second semiconductor layer opposite the first semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer, wherein a corrugated structure of alternating projecting portions and recessed portions is formed along a perimeter of side surfaces of the active layer and of the second semiconductor layer.
(FR)La présente invention concerne un dispositif optique à semi-conducteur qui comprend : une première couche semi-conductrice formée sur une plaque de base ; une seconde couche semi-conductrice en face de la première couche semi-conductrice ; et une couche active formée entre la première couche semi-conductrice et la seconde couche semi-conductrice. Une structure ondulée composée alternativement de parties saillantes et de parties évidées est formée le long du périmètre des surfaces latérales de la couche active et de la seconde couche semi-conductrice.
(KO)본 발명은 베이스 기판에 형성된 제1 반도체층; 상기 제1 반도체층과 대향하는 제2 반도체층; 및 상기 제1 반도체층과 제2 반도체층 사이에 형성된 활성층;을 포함하고, 상기 활성층 및 제2 반도체층의 측면 둘레 방향으로 돌출부와 요입부가 반복되는 요철 구조가 형성된 것을 특징으로 하는 반도체 광소자를 개시한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)