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1. (WO2011021756) SOLAR CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/021756    International Application No.:    PCT/KR2010/000158
Publication Date: 24.02.2011 International Filing Date: 11.01.2010
H01L 31/042 (2006.01)
Applicants: LG ELECTRONICS INC. [KR/KR]; 20, Yeouido-dong, Yeongdeungpo-gu Seoul 150-721 (KR) (For All Designated States Except US).
SHIM, Hyunja [KR/KR]; (KR) (For US Only).
LEE, Seungyoon [KR/KR]; (KR) (For US Only).
YOU, Dongjoo [KR/KR]; (KR) (For US Only).
LEE, Heonmin [KR/KR]; (KR) (For US Only).
HWANG, Suntae [KR/KR]; (KR) (For US Only).
AHN, Sehwon [KR/KR]; (KR) (For US Only).
EO, Youngjoo [KR/KR]; (KR) (For US Only)
Inventors: SHIM, Hyunja; (KR).
LEE, Seungyoon; (KR).
YOU, Dongjoo; (KR).
LEE, Heonmin; (KR).
HWANG, Suntae; (KR).
AHN, Sehwon; (KR).
EO, Youngjoo; (KR)
Agent: ROYAL PATENT LAW OFFICE; 1st Floor, Downon Bldg. 1059-11 Nam-Hyun Dong, Kwanak Gu Seoul 151-800 (KR)
Priority Data:
10-2009-0076824 19.08.2009 KR
Abstract: front page image
(EN)A solar cell is disclosed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and a photoelectric transformation unit between the first electrode and the second electrode. The photoelectric transformation unit includes a first intrinsic (referred to as an i-type) semiconductor layer formed of amorphous silicon doped with at least one of carbon (C) and oxygen (O) as impurities and a second i-type semiconductor layer formed of germanium (Ge)-doped microcrystalline silicon.
(FR)La présente invention concerne une cellule solaire. Cette cellule solaire comprend un substrat, une première électrode disposée sur le substrat, une seconde électrode, et une unité de transformation photoélectrique entre la première électrode et la seconde électrode. L'unité de transformation photoélectrique comprend une première couche semi-conductrice intrinsèque (désignée par type i) formée d'un silicium amorphe dopé avec au moins du carbone (C) et de l'oxygène (O) en tant qu'impuretés et une seconde couche semi-conductrice de type i formée de silicium microcristallin de germanium (Ge) dopé.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)