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1. (WO2011021264) NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/021264    International Application No.:    PCT/JP2009/064402
Publication Date: 24.02.2011 International Filing Date: 17.08.2009
IPC:
H01L 33/00 (2010.01)
Applicants: KABUSHIKI KAISHA TOSHIBA [JP/JP]; 1-1, Shibaura 1-chome, Minato-ku, Tokyo 1058001 (JP) (For All Designated States Except US).
TACHIBANA, Koichi [JP/JP]; (For US Only).
NAGO, Hajime [JP/JP]; (For US Only).
HIKOSAKA, Toshiki [JP/JP]; (For US Only).
NUNOUE, Shinya [JP/JP]; (For US Only)
Inventors: TACHIBANA, Koichi; .
NAGO, Hajime; .
HIKOSAKA, Toshiki; .
NUNOUE, Shinya;
Agent: SUZUYE, Takehiko; c/o SUZUYE & SUZUYE, 1-12-9, Toranomon, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
Title (EN) NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
(FR) ÉLÉMENT ÉMETTANT DE LA LUMIÈRE À SEMI-CONDUCTEUR AUX NITRURES
(JA) 窒化物半導体発光素子
Abstract: front page image
(EN)Disclosed is a nitride semiconductor light emitting element comprising a substrate (1) and an active layer (4) that has a single quantum well structure or a multiple quantum well structure that is provided on the substrate (1) and is held between a pair of clad layers.  The active layer (4) has a structure comprising a quantum well layer (4a) and a pair of barrier layers (4b) that have a larger band gap than the quantum well layer (4a) and hold the quantum well layer (4a) therebetween.  The pair of barrier layers (4b) each comprise, as viewed from the quantum well layer side, a first sub-barrier layer (4b1) formed of Iny1Ga1-y1N, a second sub-barrier layer (4b2) formed of Iny2Ga1-y2N, and a third sub-barrier layer (4b3) formed of Iny3Ga1-y3N and satisfy the following relationships: 0 ≤ y1, y3 < y2 < 1, and y1 = y3.
(FR)L'invention porte sur un élément émettant la lumière à semi-conducteur aux nitrures, comprenant un substrat (1) et une couche active (4) qui a une structure à puits quantique unique ou structure à puits quantiques multiples qui est disposée sur le substrat (1) et est maintenue entre une paire de couches de gaine. La couche active (4) a une structure comprenant une couche à puits quantique (4a) et une paire de couches barrières (4b) qui ont une bande interdite plus large que la couche à puits quantique (4a) et maintiennent la couche à puits quantique (4a) entre celles-ci. La paire de couches barrières (4b) comprend chacune, vue du côté couche à puits quantique, une première sous-couche barrière (4b1) formée de Iny1Ga1-y1N, une deuxième sous-couche barrière (4b2) formée de Iny2Ga1-y2N et une troisième sous-couche barrière (4b3) formée de Iny3Ga1-y3N et satisfont les relations suivantes : 0 ≤ y1, y3 < y2 < 1 et y1 = y3.
(JA) 基板(1)上に一対のクラッド層間に挟まれた単一量子井戸構造又は多重量子井戸構造の活性層(4)を具備し、活性層(4)は、量子井戸層(4a)と、この量子井戸層(4a)を、量子井戸層(4a)よりもバンドギャップが大きい一対のバリア層(4b)により挟んだ構造を有し、一対のバリア層(4b)のそれぞれは、量子井戸層側から順に、Iny1Ga1-y1Nから構成される第1のサブバリア層(4b)と、Iny2Ga1-y2Nから構成される第2のサブバリア層(4b)と、Iny3Ga1-y3Nから構成される第3のサブバリア層(4b)とを含み、0≦y1,y3<y2<1、及びy1=y3の関係を満たす窒化物半導体発光素子。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)