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1. (WO2011020712) OLIGOTHIOPHENES DERIVATIVES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/020712    International Application No.:    PCT/EP2010/061475
Publication Date: 24.02.2011 International Filing Date: 06.08.2010
Chapter 2 Demand Filed:    16.06.2011    
IPC:
C07D 333/38 (2006.01), H01L 21/00 (2006.01), H01L 51/00 (2006.01), C08G 61/00 (2006.01)
Applicants: UNIVERSITE LIBRE DE BRUXELLES [BE/BE]; Avenue Franklin Roosevelt 50 CP 161 B-1050 Bruxelles (BE) (For All Designated States Except US).
UNIVERSITE DE MONS [BE/BE]; Place du Parc, 20 B-7000 Mons (BE) (For All Designated States Except US).
BALANDIER, Jean-Yves [FR/BE]; (BE) (For US Only).
QUIST, Florence [FR/BE]; (BE) (For US Only).
AMATO, Claire [FR/BE]; (BE) (For US Only).
SERGUEEV, Serguei [RU/BE]; (BE) (For US Only).
GEERTS, Yves [BE/BE]; (BE) (For US Only).
CORNIL, Jérôme [BE/BE]; (BE) (For US Only).
BOUZAKRAOUI, Saïd [MA/BE]; (BE) (For US Only)
Inventors: BALANDIER, Jean-Yves; (BE).
QUIST, Florence; (BE).
AMATO, Claire; (BE).
SERGUEEV, Serguei; (BE).
GEERTS, Yves; (BE).
CORNIL, Jérôme; (BE).
BOUZAKRAOUI, Saïd; (BE)
Agent: PRONOVEM - OFFICE VAN MALDEREN; Ave Josse Goffin 158 B-1082 Brussels (BE)
Priority Data:
09168111.4 18.08.2009 EP
Title (EN) OLIGOTHIOPHENES DERIVATIVES
(FR) DÉRIVÉS OLIGOTHIOPHÈNES
Abstract: front page image
(EN)The present invention is directed to new oligothiophene derivatives and their use as a semiconductor material in electronic devices. More specifically, the present invention relates to new 3,4-dicyanooligothiophenes derivatives, processes for manufacturing thereof, and to their use as organic n-type (electron-transporting) semiconductors, in particular, in field-effect transistors (FET).
(FR)La présente invention porte sur de nouveaux dérivés oligothiophènes et sur leur utilisation en tant que matériau semi-conducteur dans des dispositifs électroniques. Plus particulièrement, la présente invention porte sur de nouveaux dérivés 3,4-dicyanooligothiophènes, sur des procédés pour leur fabrication et sur leur utilisation en tant que semi-conducteurs organiques de type n (transporteurs d'électrons), en particulier dans des transistors à effets de champ (TEC).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)