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1. (WO2011018971) TANTALUM SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/018971    International Application No.:    PCT/JP2010/063194
Publication Date: 17.02.2011 International Filing Date: 04.08.2010
Chapter 2 Demand Filed:    02.11.2010    
IPC:
C23C 14/34 (2006.01), C22C 27/02 (2006.01), C22F 1/00 (2006.01), C22F 1/18 (2006.01)
Applicants: JX Nippon Mining & Metals Corporation [JP/JP]; 6-3, Otemachi 2-chome, Chiyoda-ku, Tokyo 1008164 (JP) (For All Designated States Except US).
FUKUSHIMA Atsushi [JP/JP]; (JP) (For US Only).
ODA Kunihiro [JP/JP]; (JP) (For US Only).
SENDA Shinichiro [JP/JP]; (JP) (For US Only)
Inventors: FUKUSHIMA Atsushi; (JP).
ODA Kunihiro; (JP).
SENDA Shinichiro; (JP)
Agent: OGOSHI Isamu; OGOSHI International Patent Office Daini-Toranomon Denki Bldg., 5F, 3-1-10, Toranomon, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
2009-186256 11.08.2009 JP
Title (EN) TANTALUM SPUTTERING TARGET
(FR) CIBLE DE PULVÉRISATION DE TANTALE
(JA) タンタルスパッタリングターゲット
Abstract: front page image
(EN)Disclosed is a tantalum sputtering target which is characterized by containing 1-100 ppm by mass (inclusive) of tungsten as an essential ingredient and having a purity of not less than 99.998% when tungsten and gas components are excluded. Also disclosed is the tantalum sputtering target which is characterized by additionally containing 0-100 ppm by mass (excluding 0 ppm by mass) of molybdenum and/or niobium with the total content of tungsten, molybdenum and niobium being 1-150 ppm by mass (inclusive), and having a purity of not less than 99.998% when tungsten, molybdenum, niobium and gas components are excluded. Each of the tantalum sputtering targets has a uniform fine structure and high purity, and provides stable plasma and a film having excellent uniformity.
(FR)L'invention concerne une cible de pulvérisation de tantale qui est caractérisée en ce qu'elle contient 1-100 ppm (inclus) en poids de tungstène comme ingrédient essentiel, et dont la pureté est d'au moins 99,998% quand le tungstène et les composants gazeux sont exclus. L'invention concerne aussi une cible de pulvérisation de tantale qui est caractérisée en ce qu'elle contient en outre 0-100 ppm en poids (à l'exclusion de 0 ppm en poids) de molybdène et/ou de niobium, la teneur totale en tungstène, en molybdène et en niobium étant de 1-150 ppm (inclus) en poids, et dont la pureté est d'au moins 99,998% quand le tungstène, le molybdène, le niobium et les composants gazeux sont exclus. Chacune des cibles de pulvérisation de tantale présente une structure fine uniforme et une grande pureté, et permet de produire un plasma stable et un film présentant une excellente uniformité.
(JA)1massppm以上、100massppm以下のタングステンを必須成分として含有し、タングステン及びガス成分を除く純度が99.998%以上であることを特徴とするタンタルスパッタリングターゲット。0~100massppm(但し0massppmを除く)のモリブデン及び/又はニオブをさらに含有し、タングステン、モリブデン、ニオブの合計含有量が1massppm以上、150massppm以下であり、タングステン、モリブデン、ニオブ及びガス成分を除く純度が99.998%以上であることを特徴とする上記のタンタルスパッタリングターゲット。均一微細な組織を備え、プラズマが安定であり、膜の均一性(ユニフォーミティ)に優れた高純度タンタルスパッタリングターゲットを得る。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)