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Machine translation
1. (WO2011018114) TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2011/018114    International Application No.:    PCT/EP2009/060509
Publication Date: 17.02.2011 International Filing Date: 13.08.2009
IPC:
H01L 29/78 (2006.01), H01L 29/06 (2006.01), H01L 29/423 (2006.01), H01L 29/417 (2006.01), H01L 29/08 (2006.01), H01L 29/40 (2006.01)
Applicants: X-FAB SEMICONDUCTOR FOUNDRIES AG [DE/DE]; Haarbergstrasse 67 99097 Erfurt (DE) (For All Designated States Except US).
HU, Yong Hai [SG/DE]; (DE) (For US Only).
MICHAEL, Tiong [MY/MY]; (MY) (For US Only).
FROEHLICH, Manfred [DE/DE]; (DE) (For US Only)
Inventors: HU, Yong Hai; (DE).
MICHAEL, Tiong; (MY).
FROEHLICH, Manfred; (DE)
Priority Data:
Title (EN) TRANSISTOR
(FR) TRANSISTOR
Abstract: front page image
(EN)A transistor arranged to have an improved Safe Operating Area. The transistor has a Source, Drain, insulator and a Gate comprising one or more discrete Gate structures located at least partly over a second well, wherein at least one of the one or more discrete Gate structures does not substantially overlap with the insulator. The transistor may also be arranged such that the Source is disposed substantially between the Drain and the Gate.
(FR)L'invention porte sur un transistor agencé pour posséder une zone améliorée de fonctionnement sûr. Le transistor présente une source, un drain, un isolant et une gâchette comportant une ou plusieurs structures discrètes de gâchette placées au moins partiellement au-dessus d'un second puits, au moins une desdites structures discrètes de gâchette ne chevauchant sensiblement pas l'isolant. Le transistor peut également être agencé de telle manière que la source est disposée sensiblement entre le drain et la gâchette.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)